Doping of sub-50nm SOI layers

INIS

• layers 100%
• silicon 100%
• thickness 66%
• devices 66%
• fins 66%
• control 33%
• surfaces 33%
• range 33%
• amorphous state 33%
• geometry 33%
• increasing 33%
• doped materials 33%
• retention 33%
• annealing 33%
• sheets 33%
• recrystallization 33%
• field effect transistors 33%
• carrier mobility 33%

Engineering

• Isolators 100%
• Layer Thickness 33%
• Dopants 33%
• Field-Effect Transistor 33%
• Extended Surface 33%
• Drain Region 33%
• Carrier Mobility 33%
• Sheet Resistance 33%

Material Science

• Silicon 100%
• Doping (Additives) 33%
• Amorphization 33%
• Carrier Mobility 33%
• Crystalline Material 33%
• Field Effect Transistors 33%