Doping of sub-50nm SOI layers

B. J. Pawlak, R. Duffy, M. van Dal, F. Voogt, R. Weemaes, F. Roozeboom, P. Zalm, Nick Bennett, Nick E. B. Cowern

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Doping of thin body Si becomes very essential topic due to increasing interest of forming source/drain regions in fully depleted planar silicon-on-isolator (SOI) devices or vertical Fin field-effect-transistors (FinFETs). To diminish the role of the short-channel-effect (SCE) control, the Si layers thicknesses target the 10 nm range. In this paper many aspects of thin Si body doping are discussed: dopant retention, implantation-related amorphization, thin body recrystallization, sheet resistance (Rs) and carrier mobility in crystalline or amorphized material, impact of the annealing ambient on Rs for various SOI thicknesses. The complexity of 3D geometry for vertical Fin and the vicinity of the extended surface have an impact on doping strategies that are significantly different than for planar bulk devices.

Original languageEnglish
Title of host publicationDoping Engineering for Front-End Processing
Subtitle of host publicationSymposium E
PublisherMaterials Research Society
Number of pages7
ISBN (Print)9781605110400
Publication statusPublished - 2008
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: 25 Mar 200827 Mar 2008

Publication series

NameMRS Proceedings
PublisherMaterials Research Society
ISSN (Print)1946-4274


Conference2008 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials


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