Abstract
We have studied nitrogen-doped ZnSe layers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. A hole trap with activation energy Ev + 0.11 eV is attributed to a nitrogen acceptor which controls the p-type conduction in the materials. The drift mobility was measured using a time-of-flight technique. Values ranging from 5 to 80 cm2/V s were obtained at room temperature, depending on doping level. © 1998 Elsevier Science B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 490-494 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 184-185 |
DOIs | |
Publication status | Published - 1998 |
Keywords
- Admittance
- DLTS
- Drift mobility
- MBE
- Nitrogen
- p-ZnSe