DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe

I. S. Hauksson; D. Seghier; H. P. Gislason; G. D. Brownlie; K. A. Prior; B. C. Cavenett

doi:10.1016/S0022-0248(98)80102-4

DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe

I. S. Hauksson, D. Seghier, H. P. Gislason, G. D. Brownlie, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have studied nitrogen-doped ZnSe layers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. A hole trap with activation energy E_v + 0.11 eV is attributed to a nitrogen acceptor which controls the p-type conduction in the materials. The drift mobility was measured using a time-of-flight technique. Values ranging from 5 to 80 cm²/V s were obtained at room temperature, depending on doping level. © 1998 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	490-494
Number of pages	5
Journal	Journal of Crystal Growth
Volume	184-185
DOIs	https://doi.org/10.1016/S0022-0248(98)80102-4
Publication status	Published - 1998

Keywords

Admittance
DLTS
Drift mobility
MBE
Nitrogen
p-ZnSe

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10.1016/S0022-0248(98)80102-4

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title = "DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe",

abstract = "We have studied nitrogen-doped ZnSe layers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. A hole trap with activation energy Ev + 0.11 eV is attributed to a nitrogen acceptor which controls the p-type conduction in the materials. The drift mobility was measured using a time-of-flight technique. Values ranging from 5 to 80 cm2/V s were obtained at room temperature, depending on doping level. {\textcopyright} 1998 Elsevier Science B.V. All rights reserved.",

keywords = "Admittance, DLTS, Drift mobility, MBE, Nitrogen, p-ZnSe",

author = "Hauksson, {I. S.} and D. Seghier and Gislason, {H. P.} and Brownlie, {G. D.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1998",

doi = "10.1016/S0022-0248(98)80102-4",

language = "English",

volume = "184-185",

pages = "490--494",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

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TY - JOUR

T1 - DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe

AU - Hauksson, I. S.

AU - Seghier, D.

AU - Gislason, H. P.

AU - Brownlie, G. D.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1998

Y1 - 1998

N2 - We have studied nitrogen-doped ZnSe layers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. A hole trap with activation energy Ev + 0.11 eV is attributed to a nitrogen acceptor which controls the p-type conduction in the materials. The drift mobility was measured using a time-of-flight technique. Values ranging from 5 to 80 cm2/V s were obtained at room temperature, depending on doping level. © 1998 Elsevier Science B.V. All rights reserved.

AB - We have studied nitrogen-doped ZnSe layers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. A hole trap with activation energy Ev + 0.11 eV is attributed to a nitrogen acceptor which controls the p-type conduction in the materials. The drift mobility was measured using a time-of-flight technique. Values ranging from 5 to 80 cm2/V s were obtained at room temperature, depending on doping level. © 1998 Elsevier Science B.V. All rights reserved.

KW - Admittance

KW - DLTS

KW - Drift mobility

KW - MBE

KW - Nitrogen

KW - p-ZnSe

UR - http://www.scopus.com/inward/record.url?scp=0005516878&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(98)80102-4

DO - 10.1016/S0022-0248(98)80102-4

M3 - Article

SN - 0022-0248

VL - 184-185

SP - 490

EP - 494

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe

Abstract

Keywords

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