DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe

I. S. Hauksson, D. Seghier, H. P. Gislason, G. D. Brownlie, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

We have studied nitrogen-doped ZnSe layers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. A hole trap with activation energy Ev + 0.11 eV is attributed to a nitrogen acceptor which controls the p-type conduction in the materials. The drift mobility was measured using a time-of-flight technique. Values ranging from 5 to 80 cm2/V s were obtained at room temperature, depending on doping level. © 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)490-494
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
DOIs
Publication statusPublished - 1998

Fingerprint

nitrogen
electrical impedance
spectroscopy
traps
activation energy
conduction
room temperature

Keywords

  • Admittance
  • DLTS
  • Drift mobility
  • MBE
  • Nitrogen
  • p-ZnSe

Cite this

Hauksson, I. S., Seghier, D., Gislason, H. P., Brownlie, G. D., Prior, K. A., & Cavenett, B. C. (1998). DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe. Journal of Crystal Growth, 184-185, 490-494. https://doi.org/10.1016/S0022-0248(98)80102-4
Hauksson, I. S. ; Seghier, D. ; Gislason, H. P. ; Brownlie, G. D. ; Prior, K. A. ; Cavenett, B. C. / DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe. In: Journal of Crystal Growth. 1998 ; Vol. 184-185. pp. 490-494.
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Hauksson, IS, Seghier, D, Gislason, HP, Brownlie, GD, Prior, KA & Cavenett, BC 1998, 'DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe', Journal of Crystal Growth, vol. 184-185, pp. 490-494. https://doi.org/10.1016/S0022-0248(98)80102-4

DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe. / Hauksson, I. S.; Seghier, D.; Gislason, H. P.; Brownlie, G. D.; Prior, K. A.; Cavenett, B. C.

In: Journal of Crystal Growth, Vol. 184-185, 1998, p. 490-494.

Research output: Contribution to journalArticle

TY - JOUR

T1 - DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe

AU - Hauksson, I. S.

AU - Seghier, D.

AU - Gislason, H. P.

AU - Brownlie, G. D.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1998

Y1 - 1998

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AB - We have studied nitrogen-doped ZnSe layers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. A hole trap with activation energy Ev + 0.11 eV is attributed to a nitrogen acceptor which controls the p-type conduction in the materials. The drift mobility was measured using a time-of-flight technique. Values ranging from 5 to 80 cm2/V s were obtained at room temperature, depending on doping level. © 1998 Elsevier Science B.V. All rights reserved.

KW - Admittance

KW - DLTS

KW - Drift mobility

KW - MBE

KW - Nitrogen

KW - p-ZnSe

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Hauksson IS, Seghier D, Gislason HP, Brownlie GD, Prior KA, Cavenett BC. DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe. Journal of Crystal Growth. 1998;184-185:490-494. https://doi.org/10.1016/S0022-0248(98)80102-4