DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe

I. S. Hauksson, D. Seghier, H. P. Gislason, G. D. Brownlie, K. A. Prior, B. C. Cavenett

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Abstract

We have studied nitrogen-doped ZnSe layers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. A hole trap with activation energy Ev + 0.11 eV is attributed to a nitrogen acceptor which controls the p-type conduction in the materials. The drift mobility was measured using a time-of-flight technique. Values ranging from 5 to 80 cm2/V s were obtained at room temperature, depending on doping level. © 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)490-494
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
DOIs
Publication statusPublished - 1998

Keywords

  • Admittance
  • DLTS
  • Drift mobility
  • MBE
  • Nitrogen
  • p-ZnSe

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    Hauksson, I. S., Seghier, D., Gislason, H. P., Brownlie, G. D., Prior, K. A., & Cavenett, B. C. (1998). DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe. Journal of Crystal Growth, 184-185, 490-494. https://doi.org/10.1016/S0022-0248(98)80102-4