We have studied nitrogen-doped ZnSe layers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. A hole trap with activation energy Ev + 0.11 eV is attributed to a nitrogen acceptor which controls the p-type conduction in the materials. The drift mobility was measured using a time-of-flight technique. Values ranging from 5 to 80 cm2/V s were obtained at room temperature, depending on doping level. © 1998 Elsevier Science B.V. All rights reserved.
- Drift mobility