DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe

I. S. Hauksson, D. Seghier, H. P. Gislason, G. D. Brownlie, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We have studied nitrogen-doped ZnSe layers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. A hole trap with activation energy Ev + 0.11 eV is attributed to a nitrogen acceptor which controls the p-type conduction in the materials. The drift mobility was measured using a time-of-flight technique. Values ranging from 5 to 80 cm2/V s were obtained at room temperature, depending on doping level. © 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)490-494
Number of pages5
JournalJournal of Crystal Growth
Publication statusPublished - 1998


  • Admittance
  • DLTS
  • Drift mobility
  • MBE
  • Nitrogen
  • p-ZnSe


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