We report on the formation of discrete Schottky barriers for Au, Ag and Sb contacts to chemically etched n-ZnSe/n+GaAs(100). For Au/n-ZnSe fb = 0.9, 1.2, 1.45 and 1.65 ± 0.04 eV, for Ag/n-ZnSe fb = 1.2 and 1.45 ± 0.04 eV and for Sb/n-ZnSe fb = 1.45, 1.65, 1.8 and 2.1 ± 0.04 eV were repeatedly observed. Often the barrier height was seen to vary from contact to contact on the same sample. The barrier heights appear to be independent of the metal used but correlated well with reported deep levels. These findings combined with the ageing properties of Au/n-ZnSe(100) devices in particular leads us to the conclusion that Fermi level pinning by native defects is a dominant mechanism in Schottky barrier formation in these systems.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Publication status||Published - Feb 1996|