Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, magneto-optics, and charge tuning

Artur Branny, Gang Wang, Santosh Kumar, Cedric Robert, Benjamin Lassagne, Xavier Marie, Brian D Gerardot, Bernhard Urbaszek

Research output: Contribution to journalArticle

44 Citations (Scopus)
109 Downloads (Pure)

Abstract

Transition metal dichalcogenide monolayers such as MoSe2, MoS2, and WSe2 are direct bandgap semiconductors with original optoelectronic and spin-valley properties. Here we report on spectrally sharp, spatially localized emission in monolayer MoSe2. We find this quantum dot-like emission in samples exfoliated onto gold substrates and also suspended flakes. Spatial mapping shows a correlation between the location of emitters and the existence of wrinkles (strained regions) in the flake. We tune the emission properties in magnetic and electric fields applied perpendicular to the monolayer plane. We extract an exciton g-factor of the discrete emitters close to -4, as for 2D excitons in this material. In a charge tunable sample, we record discrete jumps on the meV scale as charges are added to the emitter when changing the applied voltage. (C) 2016 Author(s).

Original languageEnglish
Article number142101
Number of pages5
JournalApplied Physics Letters
Volume108
Issue number14
DOIs
Publication statusPublished - 4 Apr 2016

Keywords

  • ATOMICALLY THIN SEMICONDUCTOR
  • FINE-STRUCTURE
  • WSE2
  • NANOCLUSTERS
  • EMISSION
  • PHOTOLUMINESCENCE
  • EXCITONS
  • SPECTROSCOPY
  • TRANSISTORS
  • DEFECTS

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