Direct ultrafast laser written C-band waveguide amplifier in Er-doped chalcogenide glass

Tamilarasan Sabapathy, Arunbabu Ayiriveetil, Ajoy Kumar Kar, Sundarrajan Asokan, Stephen J. Beecher

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Abstract

This paper reports the fabrication and characterization of an ultrafast laser written Er-doped chalcogenide glass buried waveguide amplifier; Er-doped GeGaS glass has been synthesized by the vacuum sealed melt quenching technique. Waveguides have been fabricated inside the 4 mm long sample by direct ultrafast laser writing. The total passive fiber-to-fiber insertion loss is 2.58 +/- 0.02 dB at 1600 nm, including a propagation loss of 1.6 +/- 0.3 dB. Active characterization shows a relative gain of 2.524 +/- 0.002 dB/cm and 1.359 +/- 0.005 dB/cm at 1541 nm and 1550 nm respectively, for a pump power of 500 mW at a wavelength of 980 nm. (C) 2012 Optical Society of America

Original languageEnglish
Pages (from-to)1556-1561
Number of pages6
JournalOptical Materials Express
Volume2
Issue number11
DOIs
Publication statusPublished - 1 Nov 2012

Keywords

  • PHOTOLUMINESCENCE
  • S-GA GLASSES
  • FEMTOSECOND LASER

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