Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments

P. Rauter; T. Fromherz; G. Bauer; N. Q. Vinh; B. N. Murdin; J. P. Phillips; C. R. Pidgeon; L. Diehl; G. Dehlinger; D. Grützmacher

doi:10.1063/1.2397004

Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments

P. Rauter, T. Fromherz, G. Bauer, N. Q. Vinh, B. N. Murdin, J. P. Phillips, C. R. Pidgeon, L. Diehl, G. Dehlinger, D. Grützmacher

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Abstract

The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a SiGe heterostructure and a quantitative determination of hole relaxation under electrically active conditions. The results were obtained by femtosecond resolved pump-pump photocurrent experiments using a free electron laser (wavelength 7.9 µm). Additionally, the intensity dependence of the nonlinear photocurrent response was measured. Both types of experiments were simulated using a density matrix description. With one parameter set, a consistent modeling was achieved confirming the significance of the extracted heavy hole relaxation times. For an intersublevel spacing of 160 meV, a value of 550 fs was obtained. © 2006 American Institute of Physics.

Original language	English
Article number	211111
Journal	Applied Physics Letters
Volume	89
Issue number	21
DOIs	https://doi.org/10.1063/1.2397004
Publication status	Published - 2006

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title = "Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments",

abstract = "The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a SiGe heterostructure and a quantitative determination of hole relaxation under electrically active conditions. The results were obtained by femtosecond resolved pump-pump photocurrent experiments using a free electron laser (wavelength 7.9 µm). Additionally, the intensity dependence of the nonlinear photocurrent response was measured. Both types of experiments were simulated using a density matrix description. With one parameter set, a consistent modeling was achieved confirming the significance of the extracted heavy hole relaxation times. For an intersublevel spacing of 160 meV, a value of 550 fs was obtained. {\textcopyright} 2006 American Institute of Physics.",

author = "P. Rauter and T. Fromherz and G. Bauer and Vinh, {N. Q.} and Murdin, {B. N.} and Phillips, {J. P.} and Pidgeon, {C. R.} and L. Diehl and G. Dehlinger and D. Gr{\"u}tzmacher",

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doi = "10.1063/1.2397004",

language = "English",

volume = "89",

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T1 - Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments

AU - Rauter, P.

AU - Fromherz, T.

AU - Bauer, G.

AU - Vinh, N. Q.

AU - Murdin, B. N.

AU - Phillips, J. P.

AU - Pidgeon, C. R.

AU - Diehl, L.

AU - Dehlinger, G.

AU - Grützmacher, D.

PY - 2006

Y1 - 2006

N2 - The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a SiGe heterostructure and a quantitative determination of hole relaxation under electrically active conditions. The results were obtained by femtosecond resolved pump-pump photocurrent experiments using a free electron laser (wavelength 7.9 µm). Additionally, the intensity dependence of the nonlinear photocurrent response was measured. Both types of experiments were simulated using a density matrix description. With one parameter set, a consistent modeling was achieved confirming the significance of the extracted heavy hole relaxation times. For an intersublevel spacing of 160 meV, a value of 550 fs was obtained. © 2006 American Institute of Physics.

AB - The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a SiGe heterostructure and a quantitative determination of hole relaxation under electrically active conditions. The results were obtained by femtosecond resolved pump-pump photocurrent experiments using a free electron laser (wavelength 7.9 µm). Additionally, the intensity dependence of the nonlinear photocurrent response was measured. Both types of experiments were simulated using a density matrix description. With one parameter set, a consistent modeling was achieved confirming the significance of the extracted heavy hole relaxation times. For an intersublevel spacing of 160 meV, a value of 550 fs was obtained. © 2006 American Institute of Physics.

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U2 - 10.1063/1.2397004

DO - 10.1063/1.2397004

M3 - Article

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 211111

ER -

Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments

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