Abstract
The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a SiGe heterostructure and a quantitative determination of hole relaxation under electrically active conditions. The results were obtained by femtosecond resolved pump-pump photocurrent experiments using a free electron laser (wavelength 7.9 µm). Additionally, the intensity dependence of the nonlinear photocurrent response was measured. Both types of experiments were simulated using a density matrix description. With one parameter set, a consistent modeling was achieved confirming the significance of the extracted heavy hole relaxation times. For an intersublevel spacing of 160 meV, a value of 550 fs was obtained. © 2006 American Institute of Physics.
Original language | English |
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Article number | 211111 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2006 |