Direct measurement of the polarization-dependent absorption and saturation in an InGaAs/InGaAsP single quantum well

I. Gontijo, G. Tessier, M. Livingstone, I. Galbraith, A. C. Walker

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A simple technique has been used to measure the two polarization-dependent absorption edges in a angle quantum well around 1.5 µm. The broadband spontaneous emission of an AR-coated semiconductor laser chip was used as the spatially coherent light source in conjunction with a grating spectrometer. Absorption edges for both TE and TM polarized light have been measured in single quantum well InGaAs/InGaAsP waveguides and modeled by the k-p method. By pumping the devices with a 1.3 µm semiconductor laser, absorption saturation was also studied. The resulting changes in the refractive index were calculated from a Kramers-Kronig transformation of the absorption changes. © 1996 American Institute of Physics.

Original languageEnglish
Pages (from-to)4027-4032
Number of pages6
JournalJournal of Applied Physics
Volume80
Issue number7
DOIs
Publication statusPublished - 1996

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