Direct measurement of the effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells

S. Adams; I. Galbraith; B. N. Murdin; K. W. Mitchell; B. C. Cavenett; C. R. Pidgeon; P. B. Kirby; R. S. Smith; B. Miller

doi:10.1103/PhysRevB.46.13611

Direct measurement of the effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells

S. Adams, I. Galbraith, B. N. Murdin, K. W. Mitchell, B. C. Cavenett, C. R. Pidgeon, P. B. Kirby, R. S. Smith, B. Miller

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have made the first direct measurement of the electron effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells. The technique takes advantage of the presence, in such asymmetric structures, of parity-allowed optical transitions between the two lowest conduction subbands and the lowest valence subband. We have found that the electron mass is enhanced by 17% in a well with a sheet carrier concentration of 1.25×1012 cm-2. © 1992 The American Physical Society.

Original language	English
Pages (from-to)	13611-13614
Number of pages	4
Journal	Physical Review B: Condensed Matter
Volume	46
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.46.13611
Publication status	Published - 1992

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Adams, S., Galbraith, I., Murdin, B. N., Mitchell, K. W., Cavenett, B. C., Pidgeon, C. R., Kirby, P. B., Smith, R. S., & Miller, B. (1992). Direct measurement of the effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells. Physical Review B: Condensed Matter, 46(20), 13611-13614. https://doi.org/10.1103/PhysRevB.46.13611

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title = "Direct measurement of the effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells",

abstract = "We have made the first direct measurement of the electron effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells. The technique takes advantage of the presence, in such asymmetric structures, of parity-allowed optical transitions between the two lowest conduction subbands and the lowest valence subband. We have found that the electron mass is enhanced by 17% in a well with a sheet carrier concentration of 1.25×1012 cm-2. {\textcopyright} 1992 The American Physical Society.",

author = "S. Adams and I. Galbraith and Murdin, {B. N.} and Mitchell, {K. W.} and Cavenett, {B. C.} and Pidgeon, {C. R.} and Kirby, {P. B.} and Smith, {R. S.} and B. Miller",

year = "1992",

doi = "10.1103/PhysRevB.46.13611",

language = "English",

volume = "46",

pages = "13611--13614",

journal = "Physical Review B: Condensed Matter",

issn = "0163-1829",

publisher = "American Institute of Physics",

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T1 - Direct measurement of the effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells

AU - Adams, S.

AU - Galbraith, I.

AU - Murdin, B. N.

AU - Mitchell, K. W.

AU - Cavenett, B. C.

AU - Pidgeon, C. R.

AU - Kirby, P. B.

AU - Smith, R. S.

AU - Miller, B.

PY - 1992

Y1 - 1992

N2 - We have made the first direct measurement of the electron effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells. The technique takes advantage of the presence, in such asymmetric structures, of parity-allowed optical transitions between the two lowest conduction subbands and the lowest valence subband. We have found that the electron mass is enhanced by 17% in a well with a sheet carrier concentration of 1.25×1012 cm-2. © 1992 The American Physical Society.

AB - We have made the first direct measurement of the electron effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells. The technique takes advantage of the presence, in such asymmetric structures, of parity-allowed optical transitions between the two lowest conduction subbands and the lowest valence subband. We have found that the electron mass is enhanced by 17% in a well with a sheet carrier concentration of 1.25×1012 cm-2. © 1992 The American Physical Society.

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U2 - 10.1103/PhysRevB.46.13611

DO - 10.1103/PhysRevB.46.13611

M3 - Article

SN - 0163-1829

VL - 46

SP - 13611

EP - 13614

JO - Physical Review B: Condensed Matter

JF - Physical Review B: Condensed Matter

IS - 20

ER -

Direct measurement of the effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells

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