Abstract
We have made the first direct measurement of the electron effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells. The technique takes advantage of the presence, in such asymmetric structures, of parity-allowed optical transitions between the two lowest conduction subbands and the lowest valence subband. We have found that the electron mass is enhanced by 17% in a well with a sheet carrier concentration of 1.25×1012 cm-2. © 1992 The American Physical Society.
Original language | English |
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Pages (from-to) | 13611-13614 |
Number of pages | 4 |
Journal | Physical Review B: Condensed Matter |
Volume | 46 |
Issue number | 20 |
DOIs | |
Publication status | Published - 1992 |