Direct measurement of the effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells

S. Adams, I. Galbraith, B. N. Murdin, K. W. Mitchell, B. C. Cavenett, C. R. Pidgeon, P. B. Kirby, R. S. Smith, B. Miller

Research output: Contribution to journalArticle

Abstract

We have made the first direct measurement of the electron effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells. The technique takes advantage of the presence, in such asymmetric structures, of parity-allowed optical transitions between the two lowest conduction subbands and the lowest valence subband. We have found that the electron mass is enhanced by 17% in a well with a sheet carrier concentration of 1.25×1012 cm-2. © 1992 The American Physical Society.

Original languageEnglish
Pages (from-to)13611-13614
Number of pages4
JournalPhysical Review B: Condensed Matter
Volume46
Issue number20
DOIs
Publication statusPublished - 1992

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