Direct Laser Writing of Nanoscale Light-Emitting Diodes

O. Makarovsky; Santosh Kumar; A. Rastelli; A. Patane; L. Eaves; A. G. Balanov; O. G. Schmidt; R. Campion; C. T. Foxon

doi:10.1002/adma.200904409

Direct Laser Writing of Nanoscale Light-Emitting Diodes

O. Makarovsky, Santosh Kumar, A. Rastelli, A. Patane, L. Eaves, A. G. Balanov, O. G. Schmidt, R. Campion, C. T. Foxon

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Nanoscale light-emitting diodes (nanoLEDs) and arrays of nanoLEDs produced by laser controlled diffusion of interstitial manganese (Mni) donor ions out of the ferromagnetic semiconductor (GaMn)As towards the underlying layers of a quantum well heterostructure. The approach represents an alternative to deep etching for the creation of nanoscale current channels and nanoLEDs.

Original language	English
Pages (from-to)	3176-3180
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	29
DOIs	https://doi.org/10.1002/adma.200904409
Publication status	Published - 3 Aug 2010

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10.1002/adma.200904409

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@article{239b892ed3fc4446bbedb2a0f1540942,

title = "Direct Laser Writing of Nanoscale Light-Emitting Diodes",

abstract = "Nanoscale light-emitting diodes (nanoLEDs) and arrays of nanoLEDs produced by laser controlled diffusion of interstitial manganese (Mni) donor ions out of the ferromagnetic semiconductor (GaMn)As towards the underlying layers of a quantum well heterostructure. The approach represents an alternative to deep etching for the creation of nanoscale current channels and nanoLEDs.",

author = "O. Makarovsky and Santosh Kumar and A. Rastelli and A. Patane and L. Eaves and Balanov, \{A. G.\} and Schmidt, \{O. G.\} and R. Campion and Foxon, \{C. T.\}",

note = "cited By 8",

year = "2010",

month = aug,

day = "3",

doi = "10.1002/adma.200904409",

language = "English",

volume = "22",

pages = "3176--3180",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "29",

}

TY - JOUR

T1 - Direct Laser Writing of Nanoscale Light-Emitting Diodes

AU - Makarovsky, O.

AU - Kumar, Santosh

AU - Rastelli, A.

AU - Patane, A.

AU - Eaves, L.

AU - Balanov, A. G.

AU - Schmidt, O. G.

AU - Campion, R.

AU - Foxon, C. T.

N1 - cited By 8

PY - 2010/8/3

Y1 - 2010/8/3

N2 - Nanoscale light-emitting diodes (nanoLEDs) and arrays of nanoLEDs produced by laser controlled diffusion of interstitial manganese (Mni) donor ions out of the ferromagnetic semiconductor (GaMn)As towards the underlying layers of a quantum well heterostructure. The approach represents an alternative to deep etching for the creation of nanoscale current channels and nanoLEDs.

AB - Nanoscale light-emitting diodes (nanoLEDs) and arrays of nanoLEDs produced by laser controlled diffusion of interstitial manganese (Mni) donor ions out of the ferromagnetic semiconductor (GaMn)As towards the underlying layers of a quantum well heterostructure. The approach represents an alternative to deep etching for the creation of nanoscale current channels and nanoLEDs.

UR - https://www.scopus.com/pages/publications/79952031380

U2 - 10.1002/adma.200904409

DO - 10.1002/adma.200904409

M3 - Article

C2 - 20535735

SN - 0935-9648

VL - 22

SP - 3176

EP - 3180

JO - Advanced Materials

JF - Advanced Materials

IS - 29

ER -

Direct Laser Writing of Nanoscale Light-Emitting Diodes

Abstract

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