Direct Laser Writing of Nanoscale Light-Emitting Diodes

O. Makarovsky; Santosh Kumar; A. Rastelli; A. Patane; L. Eaves; A. G. Balanov; O. G. Schmidt; R. Campion; C. T. Foxon

doi:10.1002/adma.200904409

Direct Laser Writing of Nanoscale Light-Emitting Diodes

O. Makarovsky, Santosh Kumar, A. Rastelli, A. Patane, L. Eaves, A. G. Balanov, O. G. Schmidt, R. Campion, C. T. Foxon

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Nanoscale light-emitting diodes (nanoLEDs) and arrays of nanoLEDs produced by laser controlled diffusion of interstitial manganese (Mni) donor ions out of the ferromagnetic semiconductor (GaMn)As towards the underlying layers of a quantum well heterostructure. The approach represents an alternative to deep etching for the creation of nanoscale current channels and nanoLEDs.

Original language	English
Pages (from-to)	3176-3180
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	29
DOIs	https://doi.org/10.1002/adma.200904409
Publication status	Published - 3 Aug 2010

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10.1002/adma.200904409

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AU - Makarovsky, O.

AU - Kumar, Santosh

AU - Rastelli, A.

AU - Patane, A.

AU - Eaves, L.

AU - Balanov, A. G.

AU - Schmidt, O. G.

AU - Campion, R.

AU - Foxon, C. T.

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AB - Nanoscale light-emitting diodes (nanoLEDs) and arrays of nanoLEDs produced by laser controlled diffusion of interstitial manganese (Mni) donor ions out of the ferromagnetic semiconductor (GaMn)As towards the underlying layers of a quantum well heterostructure. The approach represents an alternative to deep etching for the creation of nanoscale current channels and nanoLEDs.

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Direct Laser Writing of Nanoscale Light-Emitting Diodes

Abstract

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