Direct growth of ZnSe and CdSe on (100) InAs substrates

Silvia Butera, Richard T. Moug, Peter Vines, Gerald S. Buller, Kevin A. Prior

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

ZnSe and CdSe layers have been grown on InAs substrates using molecular beam epitaxy (MBE) without the need for a III-V and II-VI dual chamber system. This paper reports on the optimisation of a chemical oxide removal process using sulphur passivation. This removes the need for conventional in vacuo oxide removal under As overpressure that is used to prevent the formation of high densities of In droplets. X-ray and photoluminescence characterisation of the samples confirms single crystal growth.

Original languageEnglish
Pages (from-to)1210-1212
Number of pages3
JournalPhysica Status Solidi C - Current Topics in Solid State Physics
Volume11
Issue number7-8
DOIs
Publication statusPublished - 2014

Keywords

  • Epitaxial growth
  • II-VI
  • InAs
  • Sulphur passivation

ASJC Scopus subject areas

  • Condensed Matter Physics

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