Abstract
Accurate determination of trap density in the active region of mid-infrared narrow-bandgap detectors is crucial in the development towards background-limited performance at higher operating temperatures. We have used both optical and electrical measurements to determine the trap density in InSb/InAlSb nonequilibrium detector structures. Both of these techniques result in very good agreement with trap densities of 5×1014 cm-3.
Original language | English |
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Pages (from-to) | L731-L734 |
Number of pages | 4 |
Journal | Journal of Physics: Condensed Matter |
Volume | 12 |
Issue number | 50 |
DOIs | |
Publication status | Published - 18 Dec 2000 |