Diffusion and criticality in undoped graphene with resonant scatterers

P. M. Ostrovsky, M. Titov, S. Bera, I. V. Gornyi, A. D. Mirlin

Research output: Contribution to journalArticle

Abstract

A general theory is developed to describe graphene with an arbitrary number of isolated impurities. The theory provides a basis for an efficient numerical analysis of the charge transport and is applied to calculate the Dirac-point conductivity s of graphene with resonant scatterers. In the case of smooth resonant impurities the symmetry class is identified as DIII and s grows logarithmically with increasing impurity concentration. For vacancies (or strong on-site potential impurities, class BDI) s saturates at a constant value that depends on the vacancy distribution among two sublattices. © 2010 The American Physical Society.

Original languageEnglish
Article number266803
JournalPhysical Review Letters
Volume105
Issue number26
DOIs
Publication statusPublished - 20 Dec 2010

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graphene
impurities
scattering
sublattices
numerical analysis
conductivity
symmetry

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Ostrovsky, P. M., Titov, M., Bera, S., Gornyi, I. V., & Mirlin, A. D. (2010). Diffusion and criticality in undoped graphene with resonant scatterers. Physical Review Letters, 105(26), [266803]. https://doi.org/10.1103/PhysRevLett.105.266803
Ostrovsky, P. M. ; Titov, M. ; Bera, S. ; Gornyi, I. V. ; Mirlin, A. D. / Diffusion and criticality in undoped graphene with resonant scatterers. In: Physical Review Letters. 2010 ; Vol. 105, No. 26.
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Ostrovsky, PM, Titov, M, Bera, S, Gornyi, IV & Mirlin, AD 2010, 'Diffusion and criticality in undoped graphene with resonant scatterers', Physical Review Letters, vol. 105, no. 26, 266803. https://doi.org/10.1103/PhysRevLett.105.266803

Diffusion and criticality in undoped graphene with resonant scatterers. / Ostrovsky, P. M.; Titov, M.; Bera, S.; Gornyi, I. V.; Mirlin, A. D.

In: Physical Review Letters, Vol. 105, No. 26, 266803, 20.12.2010.

Research output: Contribution to journalArticle

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