Diffusion and criticality in undoped graphene with resonant scatterers

P. M. Ostrovsky, M. Titov, S. Bera, I. V. Gornyi, A. D. Mirlin

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A general theory is developed to describe graphene with an arbitrary number of isolated impurities. The theory provides a basis for an efficient numerical analysis of the charge transport and is applied to calculate the Dirac-point conductivity s of graphene with resonant scatterers. In the case of smooth resonant impurities the symmetry class is identified as DIII and s grows logarithmically with increasing impurity concentration. For vacancies (or strong on-site potential impurities, class BDI) s saturates at a constant value that depends on the vacancy distribution among two sublattices. © 2010 The American Physical Society.

Original languageEnglish
Article number266803
JournalPhysical Review Letters
Issue number26
Publication statusPublished - 20 Dec 2010

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    Ostrovsky, P. M., Titov, M., Bera, S., Gornyi, I. V., & Mirlin, A. D. (2010). Diffusion and criticality in undoped graphene with resonant scatterers. Physical Review Letters, 105(26), [266803]. https://doi.org/10.1103/PhysRevLett.105.266803