Dielectric and relaxation properties of thermally evaporated nanostructured bismuth sulfide thin films

K. Mageshwari, R. Sathyamoorthy*, P. Sudhagar, Yong Soo Kang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


Nanostructured bismuth sulfide thin films were prepared onto glass substrates with particle size of 21 nm by thermal evaporation using readily prepared bismuth sulfide nanocrystallite powder. The X-ray diffraction pattern revealed that bismuth sulfide thin films exhibit orthorhombic structure. The existence of quantum confinement effect was confirmed from the observed band gap energy of 1.86 eV. AC and DC electrical conductivity of Al/BiSnc/Al structures was investigated in the frequency range 0.5-100 kHz at different temperatures (303-463 K) under vacuum. The AC conductivity (σ ac ) is found to be proportional to angular frequency (ω s ). The obtained experimental result of the AC conductivity showed that the correlated barrier hopping model is the appropriate mechanism for the electron transport in the nanostructured bismuth sulfide thin films. DC conduction mechanism in these films was studied and possible conduction mechanism in the bismuth sulfide thin films was discussed.

Original languageEnglish
Pages (from-to)7245-7253
Number of pages9
JournalApplied Surface Science
Issue number16
Publication statusPublished - 1 Jun 2011


  • Bismuth sulfide
  • Dielectric property
  • Relaxation property
  • Semiconductor
  • Thin film

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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