Development of high power RF mems switches

J. S. Hong, S. G. Tan, Z. Cui, L. Wang, R. B. Greed, D. C. Voyce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

This paper reports on recent developments of high power RF MEMS switch. An approach using a matrix of switching elements for the development is introduced. The design and modelling of a 2 × 2 RF MEMS switch matrix of this type is described. The fabrication processes are presented. © 2004 IEEE.

Original languageEnglish
Title of host publication2004 4th International Conference on Microwave and Millimeter Wave Technology, Proceedings, ICMMT 2004
EditorsZ Feng, W Chen
PagesP-7-P-10
Publication statusPublished - 2004
Event2004 4th International Conference on Microwave and Millimeter Wave Technology - Beijing, China
Duration: 18 Aug 200421 Aug 2004

Conference

Conference2004 4th International Conference on Microwave and Millimeter Wave Technology
Abbreviated titleICMMT 2004
CountryChina
CityBeijing
Period18/08/0421/08/04

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