Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys

R. Moug; C. Bradford; A. Curran; Frauke Izdebski; I. Davidson; K. A. Prior; R. J. Warburton

doi:10.1016/j.mejo.2008.06.024

Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys

R. Moug, C. Bradford, A. Curran, Frauke Izdebski, I. Davidson, K. A. Prior, R. J. Warburton

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

An epitaxial lift-off technique for removing wide bandgap II-VI heterostructures from GaAs substrates has previously been demonstrated using lattice-matched MgS as the sacrificial layer. However, using MgS as an etch release layer prevents its use as a wide bandgap barrier in the rest of the structure. Here, we describe the use of the etch-resistant alloy Zn_.2Mg_.8S_.64Se_.36 which we have developed as a replacement for MgS. We demonstrate that this alloy can be grown by MBE together with MgS in heterostructures and used as a barrier for ZnSe. A ZnSe quantum well with Zn_.2Mg_.8S_.64Se_.36 barriers shows no decrease in photoluminescence intensity after the etching process but shows a shift in emission wavelength associated with the changing strain state. © 2008 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	530-532
Number of pages	3
Journal	Microelectronics Journal
Volume	40
Issue number	3
DOIs	https://doi.org/10.1016/j.mejo.2008.06.024
Publication status	Published - Mar 2009

Keywords

Epitaxial lift-off
Quantum wells
ZnMgSSe
ZnSe

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10.1016/j.mejo.2008.06.024

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title = "Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys",

abstract = "An epitaxial lift-off technique for removing wide bandgap II-VI heterostructures from GaAs substrates has previously been demonstrated using lattice-matched MgS as the sacrificial layer. However, using MgS as an etch release layer prevents its use as a wide bandgap barrier in the rest of the structure. Here, we describe the use of the etch-resistant alloy Zn.2Mg.8S.64Se.36 which we have developed as a replacement for MgS. We demonstrate that this alloy can be grown by MBE together with MgS in heterostructures and used as a barrier for ZnSe. A ZnSe quantum well with Zn.2Mg.8S.64Se.36 barriers shows no decrease in photoluminescence intensity after the etching process but shows a shift in emission wavelength associated with the changing strain state. {\textcopyright} 2008 Elsevier Ltd. All rights reserved.",

keywords = "Epitaxial lift-off, Quantum wells, ZnMgSSe, ZnSe",

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T1 - Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys

AU - Moug, R.

AU - Bradford, C.

AU - Curran, A.

AU - Izdebski, Frauke

AU - Davidson, I.

AU - Prior, K. A.

AU - Warburton, R. J.

PY - 2009/3

Y1 - 2009/3

N2 - An epitaxial lift-off technique for removing wide bandgap II-VI heterostructures from GaAs substrates has previously been demonstrated using lattice-matched MgS as the sacrificial layer. However, using MgS as an etch release layer prevents its use as a wide bandgap barrier in the rest of the structure. Here, we describe the use of the etch-resistant alloy Zn.2Mg.8S.64Se.36 which we have developed as a replacement for MgS. We demonstrate that this alloy can be grown by MBE together with MgS in heterostructures and used as a barrier for ZnSe. A ZnSe quantum well with Zn.2Mg.8S.64Se.36 barriers shows no decrease in photoluminescence intensity after the etching process but shows a shift in emission wavelength associated with the changing strain state. © 2008 Elsevier Ltd. All rights reserved.

AB - An epitaxial lift-off technique for removing wide bandgap II-VI heterostructures from GaAs substrates has previously been demonstrated using lattice-matched MgS as the sacrificial layer. However, using MgS as an etch release layer prevents its use as a wide bandgap barrier in the rest of the structure. Here, we describe the use of the etch-resistant alloy Zn.2Mg.8S.64Se.36 which we have developed as a replacement for MgS. We demonstrate that this alloy can be grown by MBE together with MgS in heterostructures and used as a barrier for ZnSe. A ZnSe quantum well with Zn.2Mg.8S.64Se.36 barriers shows no decrease in photoluminescence intensity after the etching process but shows a shift in emission wavelength associated with the changing strain state. © 2008 Elsevier Ltd. All rights reserved.

KW - Epitaxial lift-off

KW - Quantum wells

KW - ZnMgSSe

KW - ZnSe

UR - https://www.scopus.com/pages/publications/61549115955

U2 - 10.1016/j.mejo.2008.06.024

DO - 10.1016/j.mejo.2008.06.024

M3 - Article

SN - 0026-2692

VL - 40

SP - 530

EP - 532

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3

ER -

Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys

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Keywords

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