Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys

R. Moug, C. Bradford, A. Curran, Frauke Izdebski, I. Davidson, K. A. Prior, R. J. Warburton

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Abstract

An epitaxial lift-off technique for removing wide bandgap II-VI heterostructures from GaAs substrates has previously been demonstrated using lattice-matched MgS as the sacrificial layer. However, using MgS as an etch release layer prevents its use as a wide bandgap barrier in the rest of the structure. Here, we describe the use of the etch-resistant alloy Zn.2Mg.8S.64Se.36 which we have developed as a replacement for MgS. We demonstrate that this alloy can be grown by MBE together with MgS in heterostructures and used as a barrier for ZnSe. A ZnSe quantum well with Zn.2Mg.8S.64Se.36 barriers shows no decrease in photoluminescence intensity after the etching process but shows a shift in emission wavelength associated with the changing strain state. © 2008 Elsevier Ltd. All rights reserved.

Original languageEnglish
Pages (from-to)530-532
Number of pages3
JournalMicroelectronics Journal
Volume40
Issue number3
DOIs
Publication statusPublished - Mar 2009

Keywords

  • Epitaxial lift-off
  • Quantum wells
  • ZnMgSSe
  • ZnSe

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    Moug, R., Bradford, C., Curran, A., Izdebski, F., Davidson, I., Prior, K. A., & Warburton, R. J. (2009). Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys. Microelectronics Journal, 40(3), 530-532. https://doi.org/10.1016/j.mejo.2008.06.024