Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys

R. Moug, C. Bradford, A. Curran, Frauke Izdebski, I. Davidson, K. A. Prior, R. J. Warburton

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

An epitaxial lift-off technique for removing wide bandgap II-VI heterostructures from GaAs substrates has previously been demonstrated using lattice-matched MgS as the sacrificial layer. However, using MgS as an etch release layer prevents its use as a wide bandgap barrier in the rest of the structure. Here, we describe the use of the etch-resistant alloy Zn.2Mg.8S.64Se.36 which we have developed as a replacement for MgS. We demonstrate that this alloy can be grown by MBE together with MgS in heterostructures and used as a barrier for ZnSe. A ZnSe quantum well with Zn.2Mg.8S.64Se.36 barriers shows no decrease in photoluminescence intensity after the etching process but shows a shift in emission wavelength associated with the changing strain state. © 2008 Elsevier Ltd. All rights reserved.

Original languageEnglish
Pages (from-to)530-532
Number of pages3
JournalMicroelectronics Journal
Volume40
Issue number3
DOIs
Publication statusPublished - Mar 2009

Keywords

  • Epitaxial lift-off
  • Quantum wells
  • ZnMgSSe
  • ZnSe

Fingerprint

Dive into the research topics of 'Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys'. Together they form a unique fingerprint.

Cite this