Abstract
An epitaxial lift-off technique for removing wide bandgap II-VI heterostructures from GaAs substrates has previously been demonstrated using lattice-matched MgS as the sacrificial layer. However, using MgS as an etch release layer prevents its use as a wide bandgap barrier in the rest of the structure. Here, we describe the use of the etch-resistant alloy Zn.2Mg.8S.64Se.36 which we have developed as a replacement for MgS. We demonstrate that this alloy can be grown by MBE together with MgS in heterostructures and used as a barrier for ZnSe. A ZnSe quantum well with Zn.2Mg.8S.64Se.36 barriers shows no decrease in photoluminescence intensity after the etching process but shows a shift in emission wavelength associated with the changing strain state. © 2008 Elsevier Ltd. All rights reserved.
Original language | English |
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Pages (from-to) | 530-532 |
Number of pages | 3 |
Journal | Microelectronics Journal |
Volume | 40 |
Issue number | 3 |
DOIs | |
Publication status | Published - Mar 2009 |
Keywords
- Epitaxial lift-off
- Quantum wells
- ZnMgSSe
- ZnSe