Development and operation of 50nm gate length hydrogen terminated diamond field effect transistors

David Moran, D. A. MacLaren, Samuele Porro, R. Hill, H. McClelland, Phillip John, John Ivor Barrett Wilson

Research output: Contribution to conferencePaper

Original languageEnglish
Publication statusPublished - 2010
EventUK Diamond Research Conference 2010 - Warwick, United Kingdom
Duration: 13 Jul 201016 Jul 2010

Conference

ConferenceUK Diamond Research Conference 2010
CountryUnited Kingdom
CityWarwick
Period13/07/1016/07/10

Cite this

Moran, D., MacLaren, D. A., Porro, S., Hill, R., McClelland, H., John, P., & Wilson, J. I. B. (2010). Development and operation of 50nm gate length hydrogen terminated diamond field effect transistors. Paper presented at UK Diamond Research Conference 2010, Warwick, United Kingdom.