Development and characterization of II-VI blue-green diode lasers

I. S. Hauksson, S. Y. Wang, J. Simpson, M. R. Taghizadeh, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

In this paper, we report the growth and characterization of II-VI devices grown by molecular beam epitaxy (MBE). The n-type doped ZnSe epilayers were obtained using iodine fom an electrochemical cell and nitrogen from a RF plasma source was used for p-type doping. Capacitance-voltage (C-V) electrochemical profiling of layers and devices has been used to ensure uniform n-type and p-type doping. The nitrogen doped epilayers show a compensation process which leads to the suggestion of a new deep donor which is a complex, such as the (VSe-Zn-NSe) single donor which involves native Se vacancies. The fabrication of pn laser diodes and ZnSe/Zn0.82Cd0.18Se quantum well (QW) laser diodes is reported. The pn junctions show blue laser emission between 448-473 nm under pulsed current conditions at 4.2 K and the QW laser diode shows an excellent mode structure and emits at 474.8 nm at 77 K in pulsed mode operation. © 1993.

Original languageEnglish
Pages (from-to)124-129
Number of pages6
JournalPhysica B: Condensed Matter
Volume191
Issue number1-2
Publication statusPublished - 1 Sep 1993

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