Development and characterization of II-VI blue-green diode lasers

I. S. Hauksson; S. Y. Wang; J. Simpson; M. R. Taghizadeh; K. A. Prior; B. C. Cavenett

Development and characterization of II-VI blue-green diode lasers

I. S. Hauksson, S. Y. Wang, J. Simpson, M. R. Taghizadeh, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this paper, we report the growth and characterization of II-VI devices grown by molecular beam epitaxy (MBE). The n-type doped ZnSe epilayers were obtained using iodine fom an electrochemical cell and nitrogen from a RF plasma source was used for p-type doping. Capacitance-voltage (C-V) electrochemical profiling of layers and devices has been used to ensure uniform n-type and p-type doping. The nitrogen doped epilayers show a compensation process which leads to the suggestion of a new deep donor which is a complex, such as the (V_Se-Zn-N_Se) single donor which involves native Se vacancies. The fabrication of pn laser diodes and ZnSe/Zn_0.82Cd_0.18Se quantum well (QW) laser diodes is reported. The pn junctions show blue laser emission between 448-473 nm under pulsed current conditions at 4.2 K and the QW laser diode shows an excellent mode structure and emits at 474.8 nm at 77 K in pulsed mode operation. © 1993.

Original language	English
Pages (from-to)	124-129
Number of pages	6
Journal	Physica B: Condensed Matter
Volume	191
Issue number	1-2
Publication status	Published - 1 Sept 1993

Cite this

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title = "Development and characterization of II-VI blue-green diode lasers",

abstract = "In this paper, we report the growth and characterization of II-VI devices grown by molecular beam epitaxy (MBE). The n-type doped ZnSe epilayers were obtained using iodine fom an electrochemical cell and nitrogen from a RF plasma source was used for p-type doping. Capacitance-voltage (C-V) electrochemical profiling of layers and devices has been used to ensure uniform n-type and p-type doping. The nitrogen doped epilayers show a compensation process which leads to the suggestion of a new deep donor which is a complex, such as the (VSe-Zn-NSe) single donor which involves native Se vacancies. The fabrication of pn laser diodes and ZnSe/Zn0.82Cd0.18Se quantum well (QW) laser diodes is reported. The pn junctions show blue laser emission between 448-473 nm under pulsed current conditions at 4.2 K and the QW laser diode shows an excellent mode structure and emits at 474.8 nm at 77 K in pulsed mode operation. {\textcopyright} 1993.",

author = "Hauksson, {I. S.} and Wang, {S. Y.} and J. Simpson and Taghizadeh, {M. R.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1993",

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language = "English",

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pages = "124--129",

journal = "Physica B: Condensed Matter",

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T1 - Development and characterization of II-VI blue-green diode lasers

AU - Hauksson, I. S.

AU - Wang, S. Y.

AU - Simpson, J.

AU - Taghizadeh, M. R.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1993/9/1

Y1 - 1993/9/1

N2 - In this paper, we report the growth and characterization of II-VI devices grown by molecular beam epitaxy (MBE). The n-type doped ZnSe epilayers were obtained using iodine fom an electrochemical cell and nitrogen from a RF plasma source was used for p-type doping. Capacitance-voltage (C-V) electrochemical profiling of layers and devices has been used to ensure uniform n-type and p-type doping. The nitrogen doped epilayers show a compensation process which leads to the suggestion of a new deep donor which is a complex, such as the (VSe-Zn-NSe) single donor which involves native Se vacancies. The fabrication of pn laser diodes and ZnSe/Zn0.82Cd0.18Se quantum well (QW) laser diodes is reported. The pn junctions show blue laser emission between 448-473 nm under pulsed current conditions at 4.2 K and the QW laser diode shows an excellent mode structure and emits at 474.8 nm at 77 K in pulsed mode operation. © 1993.

AB - In this paper, we report the growth and characterization of II-VI devices grown by molecular beam epitaxy (MBE). The n-type doped ZnSe epilayers were obtained using iodine fom an electrochemical cell and nitrogen from a RF plasma source was used for p-type doping. Capacitance-voltage (C-V) electrochemical profiling of layers and devices has been used to ensure uniform n-type and p-type doping. The nitrogen doped epilayers show a compensation process which leads to the suggestion of a new deep donor which is a complex, such as the (VSe-Zn-NSe) single donor which involves native Se vacancies. The fabrication of pn laser diodes and ZnSe/Zn0.82Cd0.18Se quantum well (QW) laser diodes is reported. The pn junctions show blue laser emission between 448-473 nm under pulsed current conditions at 4.2 K and the QW laser diode shows an excellent mode structure and emits at 474.8 nm at 77 K in pulsed mode operation. © 1993.

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M3 - Article

SN - 0921-4526

VL - 191

SP - 124

EP - 129

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-2

ER -

Development and characterization of II-VI blue-green diode lasers

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