Abstract
An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono-and bi-layer WSe 2 which locally modify the band-gap, leading to efficient funnelling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. We achieve near unity emitter creation probability and a mean positioning accuracy of 120±32 nm, which may be improved with further optimization of the nanopillar dimensions.
Original language | English |
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Article number | 15053 |
Journal | Nature Communications |
Volume | 8 |
DOIs | |
Publication status | Published - 22 May 2017 |
ASJC Scopus subject areas
- General Chemistry
- General Biochemistry,Genetics and Molecular Biology
- General Physics and Astronomy
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Brian D. Gerardot
- School of Engineering & Physical Sciences - Professor
- School of Engineering & Physical Sciences, Institute of Photonics and Quantum Sciences - Professor
Person: Academic (Research & Teaching)