Determination of the intersubband lifetime in Si/SiGe quantum wells

W. Heiss; E. Gornik; H. Hertle; B. Murdin; G. M H Knippels; C. J G M Langerak; F. Schäffler; C. R. Pidgeon

Determination of the intersubband lifetime in Si/SiGe quantum wells

W. Heiss
, E. Gornik
, H. Hertle
, B. Murdin
, G. M H Knippels
, C. J G M Langerak
, F. Schäffler
, C. R. Pidgeon

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A direct pump and probe lifetime determination in the ps regime has been made in quantum wells of Si/Si_1-xGe_x. We have used an rf linac-pumped free-electron laser to determine the relaxation time associated with intersubband absorption in Si/SiGe quantum wells with a subband separation smaller than the optical phonon energy. This measurement yields a lifetime of T₁=30 ps.© 1995 American Institute of Physics.

Original language	English
Pages (from-to)	3313-
Journal	Applied Physics Letters
Publication status	Published - 1995

Cite this

@article{98b65ed8c4da4b36b9eee216dc0a8054,

title = "Determination of the intersubband lifetime in Si/SiGe quantum wells",

abstract = "A direct pump and probe lifetime determination in the ps regime has been made in quantum wells of Si/Si1-xGex. We have used an rf linac-pumped free-electron laser to determine the relaxation time associated with intersubband absorption in Si/SiGe quantum wells with a subband separation smaller than the optical phonon energy. This measurement yields a lifetime of T1=30 ps.{\textcopyright} 1995 American Institute of Physics.",

author = "W. Heiss and E. Gornik and H. Hertle and B. Murdin and Knippels, \{G. M H\} and Langerak, \{C. J G M\} and F. Sch{\"a}ffler and Pidgeon, \{C. R.\}",

year = "1995",

language = "English",

pages = "3313--",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Determination of the intersubband lifetime in Si/SiGe quantum wells

AU - Heiss, W.

AU - Gornik, E.

AU - Hertle, H.

AU - Murdin, B.

AU - Knippels, G. M H

AU - Langerak, C. J G M

AU - Schäffler, F.

AU - Pidgeon, C. R.

PY - 1995

Y1 - 1995

N2 - A direct pump and probe lifetime determination in the ps regime has been made in quantum wells of Si/Si1-xGex. We have used an rf linac-pumped free-electron laser to determine the relaxation time associated with intersubband absorption in Si/SiGe quantum wells with a subband separation smaller than the optical phonon energy. This measurement yields a lifetime of T1=30 ps.© 1995 American Institute of Physics.

AB - A direct pump and probe lifetime determination in the ps regime has been made in quantum wells of Si/Si1-xGex. We have used an rf linac-pumped free-electron laser to determine the relaxation time associated with intersubband absorption in Si/SiGe quantum wells with a subband separation smaller than the optical phonon energy. This measurement yields a lifetime of T1=30 ps.© 1995 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/36449003653

M3 - Article

SN - 0003-6951

SP - 3313-

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Determination of the intersubband lifetime in Si/SiGe quantum wells

Abstract

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