Determination of the intersubband lifetime in Si/SiGe quantum wells

W. Heiss, E. Gornik, H. Hertle, B. Murdin, G. M H Knippels, C. J G M Langerak, F. Schäffler, C. R. Pidgeon

Research output: Contribution to journalArticle

Abstract

A direct pump and probe lifetime determination in the ps regime has been made in quantum wells of Si/Si1-xGex. We have used an rf linac-pumped free-electron laser to determine the relaxation time associated with intersubband absorption in Si/SiGe quantum wells with a subband separation smaller than the optical phonon energy. This measurement yields a lifetime of T1=30 ps.© 1995 American Institute of Physics.

Original languageEnglish
Pages (from-to)3313-
JournalApplied Physics Letters
Publication statusPublished - 1995

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    Heiss, W., Gornik, E., Hertle, H., Murdin, B., Knippels, G. M. H., Langerak, C. J. G. M., Schäffler, F., & Pidgeon, C. R. (1995). Determination of the intersubband lifetime in Si/SiGe quantum wells. Applied Physics Letters, 3313-.