Determination of the intersubband lifetime in Si/SiGe quantum wells

W. Heiss, E. Gornik, H. Hertle, B. Murdin, G. M H Knippels, C. J G M Langerak, F. Schäffler, C. R. Pidgeon

Research output: Contribution to journalArticle

Abstract

A direct pump and probe lifetime determination in the ps regime has been made in quantum wells of Si/Si1-xGex. We have used an rf linac-pumped free-electron laser to determine the relaxation time associated with intersubband absorption in Si/SiGe quantum wells with a subband separation smaller than the optical phonon energy. This measurement yields a lifetime of T1=30 ps.© 1995 American Institute of Physics.

Original languageEnglish
Pages (from-to)3313-
JournalApplied Physics Letters
Publication statusPublished - 1995

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quantum wells
life (durability)
free electron lasers
relaxation time
pumps
physics
probes
energy

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Heiss, W., Gornik, E., Hertle, H., Murdin, B., Knippels, G. M. H., Langerak, C. J. G. M., ... Pidgeon, C. R. (1995). Determination of the intersubband lifetime in Si/SiGe quantum wells. Applied Physics Letters, 3313-.
Heiss, W. ; Gornik, E. ; Hertle, H. ; Murdin, B. ; Knippels, G. M H ; Langerak, C. J G M ; Schäffler, F. ; Pidgeon, C. R. / Determination of the intersubband lifetime in Si/SiGe quantum wells. In: Applied Physics Letters. 1995 ; pp. 3313-.
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Heiss, W, Gornik, E, Hertle, H, Murdin, B, Knippels, GMH, Langerak, CJGM, Schäffler, F & Pidgeon, CR 1995, 'Determination of the intersubband lifetime in Si/SiGe quantum wells', Applied Physics Letters, pp. 3313-.

Determination of the intersubband lifetime in Si/SiGe quantum wells. / Heiss, W.; Gornik, E.; Hertle, H.; Murdin, B.; Knippels, G. M H; Langerak, C. J G M; Schäffler, F.; Pidgeon, C. R.

In: Applied Physics Letters, 1995, p. 3313-.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Determination of the intersubband lifetime in Si/SiGe quantum wells

AU - Heiss, W.

AU - Gornik, E.

AU - Hertle, H.

AU - Murdin, B.

AU - Knippels, G. M H

AU - Langerak, C. J G M

AU - Schäffler, F.

AU - Pidgeon, C. R.

PY - 1995

Y1 - 1995

N2 - A direct pump and probe lifetime determination in the ps regime has been made in quantum wells of Si/Si1-xGex. We have used an rf linac-pumped free-electron laser to determine the relaxation time associated with intersubband absorption in Si/SiGe quantum wells with a subband separation smaller than the optical phonon energy. This measurement yields a lifetime of T1=30 ps.© 1995 American Institute of Physics.

AB - A direct pump and probe lifetime determination in the ps regime has been made in quantum wells of Si/Si1-xGex. We have used an rf linac-pumped free-electron laser to determine the relaxation time associated with intersubband absorption in Si/SiGe quantum wells with a subband separation smaller than the optical phonon energy. This measurement yields a lifetime of T1=30 ps.© 1995 American Institute of Physics.

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M3 - Article

SP - 3313-

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -

Heiss W, Gornik E, Hertle H, Murdin B, Knippels GMH, Langerak CJGM et al. Determination of the intersubband lifetime in Si/SiGe quantum wells. Applied Physics Letters. 1995;3313-.