Determination of the etching mechanism in MgS and ZnMgSSe epitaxial lift-off layers

Arran Curran, Spyros Brown, Richard J. Warburton, Kevin A. Prior

Research output: Contribution to journalArticle

Abstract

During epitaxial lift-off of II-VI semiconductors a sacrificial layer of MgS is dissolved by acid. Here we show that the etching speed of this process varies inversely as the square root of the layer thickness, following a model developed previously for III-Vlift-off where the rate limiting step in both cases is transport of insoluble product gases from the etching layer. We also propose a model to explain why sacrificial layer etching fails when strong cohesive forces resist the lifting of the epilayer. This occurs when the sacrificial layer is too thin or when it contains more than a critical amount of an insoluble component, cohesion arising from dispersion forces or chains of insoluble atoms, respectively. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original languageEnglish
Pages (from-to)1399-1401
Number of pages3
JournalPhysica Status Solidi B - Basic Research
Volume247
Issue number6
DOIs
Publication statusPublished - Jun 2010

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etching
cohesion
acids
products
gases
atoms

Keywords

  • Etching
  • II-VI semiconductors
  • Surface treatment

Cite this

Curran, Arran ; Brown, Spyros ; Warburton, Richard J. ; Prior, Kevin A. / Determination of the etching mechanism in MgS and ZnMgSSe epitaxial lift-off layers. In: Physica Status Solidi B - Basic Research. 2010 ; Vol. 247, No. 6. pp. 1399-1401.
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Determination of the etching mechanism in MgS and ZnMgSSe epitaxial lift-off layers. / Curran, Arran; Brown, Spyros; Warburton, Richard J.; Prior, Kevin A.

In: Physica Status Solidi B - Basic Research, Vol. 247, No. 6, 06.2010, p. 1399-1401.

Research output: Contribution to journalArticle

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