As part of our development of an epitaxial lift-off process, utilising a sacrificial magnesium sulphide (MgS) layer, we have developed a MgS-rich ZnMgSSe alloy which provides excellent carrier confinement and resists both oxidation and acid attack. Here the optical transmission of the alloy has been measured and its bandgap determined as a direct transition at 4.19 ± 0.04 eV. Its composition has also been determined by X-ray interference (XRI) and comparison with simulations. For a range of alloy samples we obtain compositions of the Zn1-xMgxSySe1-y layers which are (x, y) = (0.80 ± 0.02, 0.645 ± 0.025). Using the alloy bandgap and composition we have determined direct bandgap transition energy for MgS by extrapolation. This is found to be 4.78 ± 0.14 eV. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|Number of pages||3|
|Journal||Physica Status Solidi B - Basic Research|
|Publication status||Published - Jun 2010|
- Absorption spectra
- II-VI semiconductors
- X-ray diffraction