Determination of the band-gap of MgS and MgS-rich Zn1-xMgxSySe1-y alloys from optical transmission measurements

Ian A. Davidson; Richard T. Moug; Frauke Izdebski; Christine Bradford; Kevin A. Prior

doi:10.1002/pssb.200983190

Determination of the band-gap of MgS and MgS-rich Zn_1-xMg_xS_ySe_1-y alloys from optical transmission measurements

Ian A. Davidson, Richard T. Moug, Frauke Izdebski, Christine Bradford, Kevin A. Prior

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

As part of our development of an epitaxial lift-off process, utilising a sacrificial magnesium sulphide (MgS) layer, we have developed a MgS-rich ZnMgSSe alloy which provides excellent carrier confinement and resists both oxidation and acid attack. Here the optical transmission of the alloy has been measured and its bandgap determined as a direct transition at 4.19 ± 0.04 eV. Its composition has also been determined by X-ray interference (XRI) and comparison with simulations. For a range of alloy samples we obtain compositions of the Zn_1-xMg_xS_ySe_1-y layers which are (x, y) = (0.80 ± 0.02, 0.645 ± 0.025). Using the alloy bandgap and composition we have determined direct bandgap transition energy for MgS by extrapolation. This is found to be 4.78 ± 0.14 eV. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Pages (from-to)	1396-1398
Number of pages	3
Journal	Physica Status Solidi B - Basic Research
Volume	247
Issue number	6
DOIs	https://doi.org/10.1002/pssb.200983190
Publication status	Published - Jun 2010

Keywords

Absorption spectra
II-VI semiconductors
X-ray diffraction

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10.1002/pssb.200983190

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title = "Determination of the band-gap of MgS and MgS-rich Zn1-xMgxSySe1-y alloys from optical transmission measurements",

abstract = "As part of our development of an epitaxial lift-off process, utilising a sacrificial magnesium sulphide (MgS) layer, we have developed a MgS-rich ZnMgSSe alloy which provides excellent carrier confinement and resists both oxidation and acid attack. Here the optical transmission of the alloy has been measured and its bandgap determined as a direct transition at 4.19 ± 0.04 eV. Its composition has also been determined by X-ray interference (XRI) and comparison with simulations. For a range of alloy samples we obtain compositions of the Zn1-xMgxSySe1-y layers which are (x, y) = (0.80 ± 0.02, 0.645 ± 0.025). Using the alloy bandgap and composition we have determined direct bandgap transition energy for MgS by extrapolation. This is found to be 4.78 ± 0.14 eV. {\textcopyright} 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

keywords = "Absorption spectra, II-VI semiconductors, X-ray diffraction",

author = "Davidson, {Ian A.} and Moug, {Richard T.} and Frauke Izdebski and Christine Bradford and Prior, {Kevin A.}",

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T1 - Determination of the band-gap of MgS and MgS-rich Zn1-xMgxSySe1-y alloys from optical transmission measurements

AU - Davidson, Ian A.

AU - Moug, Richard T.

AU - Izdebski, Frauke

AU - Bradford, Christine

AU - Prior, Kevin A.

PY - 2010/6

Y1 - 2010/6

N2 - As part of our development of an epitaxial lift-off process, utilising a sacrificial magnesium sulphide (MgS) layer, we have developed a MgS-rich ZnMgSSe alloy which provides excellent carrier confinement and resists both oxidation and acid attack. Here the optical transmission of the alloy has been measured and its bandgap determined as a direct transition at 4.19 ± 0.04 eV. Its composition has also been determined by X-ray interference (XRI) and comparison with simulations. For a range of alloy samples we obtain compositions of the Zn1-xMgxSySe1-y layers which are (x, y) = (0.80 ± 0.02, 0.645 ± 0.025). Using the alloy bandgap and composition we have determined direct bandgap transition energy for MgS by extrapolation. This is found to be 4.78 ± 0.14 eV. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - As part of our development of an epitaxial lift-off process, utilising a sacrificial magnesium sulphide (MgS) layer, we have developed a MgS-rich ZnMgSSe alloy which provides excellent carrier confinement and resists both oxidation and acid attack. Here the optical transmission of the alloy has been measured and its bandgap determined as a direct transition at 4.19 ± 0.04 eV. Its composition has also been determined by X-ray interference (XRI) and comparison with simulations. For a range of alloy samples we obtain compositions of the Zn1-xMgxSySe1-y layers which are (x, y) = (0.80 ± 0.02, 0.645 ± 0.025). Using the alloy bandgap and composition we have determined direct bandgap transition energy for MgS by extrapolation. This is found to be 4.78 ± 0.14 eV. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - Absorption spectra

KW - II-VI semiconductors

KW - X-ray diffraction

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DO - 10.1002/pssb.200983190

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VL - 247

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EP - 1398

JO - Physica Status Solidi B - Basic Research

JF - Physica Status Solidi B - Basic Research

IS - 6

ER -

Determination of the band-gap of MgS and MgS-rich Zn_1-xMg_xS_ySe_1-y alloys from optical transmission measurements

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Keywords

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