Detection of charge motion in a non-metallic silicon isolated double quantum dot

T. Ferrus, A. Rossi, M. Tanner, G. Podd, P. Chapman

Research output: Contribution to journalArticle

Abstract

As semiconductor device dimensions are reduced to the nanometer scale, the effects of high-defect-density surfaces on the transport properties become important to such an extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here, we have investigated the mechanism of the detection of electron motion inside an electrically isolated double quantum dot that is capacitively coupled to a single-electron transistor (SET), both fabricated from highly phosphorus-doped silicon wafers. Despite the absence of direct charge transfer between the detector and the double dot structure, efficient detection is obtained. In particular, unusually large Coulomb peak shifts in gate voltage are observed. The results are explained in terms of charge rearrangement and the presence of inelastic cotunneling via states at the periphery of the SET dot.

Original languageEnglish
Article number103012
JournalNew Journal of Physics
Volume13
DOIs
Publication statusPublished - Oct 2011

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single electron transistors
quantum dots
silicon
semiconductor devices
phosphorus
transport properties
charge transfer
wafers
shift
detectors
defects
electric potential
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

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abstract = "As semiconductor device dimensions are reduced to the nanometer scale, the effects of high-defect-density surfaces on the transport properties become important to such an extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here, we have investigated the mechanism of the detection of electron motion inside an electrically isolated double quantum dot that is capacitively coupled to a single-electron transistor (SET), both fabricated from highly phosphorus-doped silicon wafers. Despite the absence of direct charge transfer between the detector and the double dot structure, efficient detection is obtained. In particular, unusually large Coulomb peak shifts in gate voltage are observed. The results are explained in terms of charge rearrangement and the presence of inelastic cotunneling via states at the periphery of the SET dot.",
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Detection of charge motion in a non-metallic silicon isolated double quantum dot. / Ferrus, T.; Rossi, A.; Tanner, M.; Podd, G.; Chapman, P.

In: New Journal of Physics, Vol. 13, 103012, 10.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Detection of charge motion in a non-metallic silicon isolated double quantum dot

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AU - Rossi, A.

AU - Tanner, M.

AU - Podd, G.

AU - Chapman, P.

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AB - As semiconductor device dimensions are reduced to the nanometer scale, the effects of high-defect-density surfaces on the transport properties become important to such an extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here, we have investigated the mechanism of the detection of electron motion inside an electrically isolated double quantum dot that is capacitively coupled to a single-electron transistor (SET), both fabricated from highly phosphorus-doped silicon wafers. Despite the absence of direct charge transfer between the detector and the double dot structure, efficient detection is obtained. In particular, unusually large Coulomb peak shifts in gate voltage are observed. The results are explained in terms of charge rearrangement and the presence of inelastic cotunneling via states at the periphery of the SET dot.

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