Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection

M. A. Rowe, E. J. Gansen, M. B. Greene, D. Rosenberg, T. E. Harvey, M. Y. Su, R. H. Hadfield, S. W. Nam, R. P. Mirin

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We describe the design of the epitaxial layers for an efficient, photon-number-determining detector that utilizes a layer of self-assembled quantum dots as an optically addressable gate in a field-effect transistor. Our design features a dedicated absorption layer where photoexcited holes are produced and directed with tailored electric fields to the quantum dot layer. A barrier layer ensures that the quantum dot layer is located at a two-dimensional potential minimum of the structure for the efficient collection of holes. Using quantum dots as charge traps allows us to contain the photoexcited holes in a well-defined plane. We derive an equation for a uniform size of the photon signal based on this precise geometry. Finally, we show corroborating data with well-resolved signals corresponding to different numbers of photons. (C) 2008 American Vacuum Society.

Original languageEnglish
Pages (from-to)1174-1177
Number of pages4
JournalJournal Vacuum Science and Technology B
Volume26
Issue number3
DOIs
Publication statusPublished - May 2008

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    Rowe, M. A., Gansen, E. J., Greene, M. B., Rosenberg, D., Harvey, T. E., Su, M. Y., Hadfield, R. H., Nam, S. W., & Mirin, R. P. (2008). Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection. Journal Vacuum Science and Technology B, 26(3), 1174-1177. https://doi.org/10.1116/1.2837839