Design of the active voltage controller for series IGBTs

P. R. Palmer, Y. Wang, M. Abu-Khaizaran, S. Finney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

This paper presents an investigation into the stability and performacc of the Active Voltage Control (AVC) method of gate drive applied to Insulated Gate Bipolar Transistors (IGBTs). The analysis is performed using standard control theory methods. Various parameters that affect the stability of the feedback system are investigated using root locus plots. It will be shown that the bandwidths of various elements of the controller and the stray inductances in the gate-emitter circuitry are influential. This sets the design guidelines for improving the performance of the gate drives and for designing the compensating controller. Finally, experimental switching results from an IGBT switched with AVC using an optimised controller will be given and conclusions drawn.

Original languageEnglish
Title of host publication2004 IEEE 35th Annual Power Electronics Specialists Conference
Pages3248-3254
Number of pages7
Volume4
Publication statusPublished - 2004
Event2004 IEEE 35th Annual Power Electronics Specialists Conference - Aachen, Germany
Duration: 20 Jun 200425 Jun 2004

Conference

Conference2004 IEEE 35th Annual Power Electronics Specialists Conference
Abbreviated titlePESC04
CountryGermany
CityAachen
Period20/06/0425/06/04

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  • Cite this

    Palmer, P. R., Wang, Y., Abu-Khaizaran, M., & Finney, S. (2004). Design of the active voltage controller for series IGBTs. In 2004 IEEE 35th Annual Power Electronics Specialists Conference (Vol. 4, pp. 3248-3254)