Design and performance of an InGaAs-InP single-photon avalanche diode detector

Sara Pellegrini; Ryan E. Warburton; L. J J Tan; Jo Shien Ng; Andrey B. Krysa; Kristian Groom; J. P R David; Sergio Cova; Michael J. Robertson; Gerald S. Buller

doi:10.1109/JQE.2006.871067

Design and performance of an InGaAs-InP single-photon avalanche diode detector

Sara Pellegrini, Ryan E. Warburton, L. J J Tan, Jo Shien Ng, Andrey B. Krysa, Kristian Groom, J. P R David, Sergio Cova, Michael J. Robertson, Gerald S. Buller

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

103 Citations (Scopus)

Abstract

This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described. © 2006 IEEE.

Original language	English
Article number	01610799
Pages (from-to)	397-403
Number of pages	7
Journal	IEEE Journal of Quantum Electronics
Volume	42
Issue number	4
DOIs	https://doi.org/10.1109/JQE.2006.871067
Publication status	Published - Apr 2006

Keywords

Avalanche breakdown
Avalanche photodiodes (APDs)
Photodetectors
Photodiodes

Access to Document

10.1109/JQE.2006.871067

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Design and performance of an InGaAs-InP single-photon avalanche diode detector'. Together they form a unique fingerprint.

Cite this

@article{086ac26e01eb4ce598abde52c21efe7e,

title = "Design and performance of an InGaAs-InP single-photon avalanche diode detector",

abstract = "This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described. {\textcopyright} 2006 IEEE.",

keywords = "Avalanche breakdown, Avalanche photodiodes (APDs), Photodetectors, Photodiodes",

author = "Sara Pellegrini and Warburton, {Ryan E.} and Tan, {L. J J} and Ng, {Jo Shien} and Krysa, {Andrey B.} and Kristian Groom and David, {J. P R} and Sergio Cova and Robertson, {Michael J.} and Buller, {Gerald S.}",

year = "2006",

month = apr,

doi = "10.1109/JQE.2006.871067",

language = "English",

volume = "42",

pages = "397--403",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "IEEE",

number = "4",

}

Design and performance of an InGaAs-InP single-photon avalanche diode detector. / Pellegrini, Sara; Warburton, Ryan E.; Tan, L. J J; Ng, Jo Shien; Krysa, Andrey B.; Groom, Kristian; David, J. P R; Cova, Sergio; Robertson, Michael J.; Buller, Gerald S.

In: IEEE Journal of Quantum Electronics, Vol. 42, No. 4, 01610799, 04.2006, p. 397-403.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Design and performance of an InGaAs-InP single-photon avalanche diode detector

AU - Pellegrini, Sara

AU - Warburton, Ryan E.

AU - Tan, L. J J

AU - Ng, Jo Shien

AU - Krysa, Andrey B.

AU - Groom, Kristian

AU - David, J. P R

AU - Cova, Sergio

AU - Robertson, Michael J.

AU - Buller, Gerald S.

PY - 2006/4

Y1 - 2006/4

N2 - This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described. © 2006 IEEE.

AB - This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described. © 2006 IEEE.

KW - Avalanche breakdown

KW - Avalanche photodiodes (APDs)

KW - Photodetectors

KW - Photodiodes

UR - http://www.scopus.com/inward/record.url?scp=33846282179&partnerID=8YFLogxK

U2 - 10.1109/JQE.2006.871067

DO - 10.1109/JQE.2006.871067

M3 - Article

VL - 42

SP - 397

EP - 403

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 4

M1 - 01610799

ER -