Design and performance of an InGaAs-InP single-photon avalanche diode detector

Sara Pellegrini, Ryan E. Warburton, L. J J Tan, Jo Shien Ng, Andrey B. Krysa, Kristian Groom, J. P R David, Sergio Cova, Michael J. Robertson, Gerald S. Buller

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Abstract

This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described. © 2006 IEEE.

Original languageEnglish
Article number01610799
Pages (from-to)397-403
Number of pages7
JournalIEEE Journal of Quantum Electronics
Volume42
Issue number4
DOIs
Publication statusPublished - Apr 2006

Keywords

  • Avalanche breakdown
  • Avalanche photodiodes (APDs)
  • Photodetectors
  • Photodiodes

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    Pellegrini, S., Warburton, R. E., Tan, L. J. J., Ng, J. S., Krysa, A. B., Groom, K., David, J. P. R., Cova, S., Robertson, M. J., & Buller, G. S. (2006). Design and performance of an InGaAs-InP single-photon avalanche diode detector. IEEE Journal of Quantum Electronics, 42(4), 397-403. [01610799]. https://doi.org/10.1109/JQE.2006.871067