Abstract
This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described. © 2006 IEEE.
Original language | English |
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Article number | 01610799 |
Pages (from-to) | 397-403 |
Number of pages | 7 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 42 |
Issue number | 4 |
DOIs | |
Publication status | Published - Apr 2006 |
Keywords
- Avalanche breakdown
- Avalanche photodiodes (APDs)
- Photodetectors
- Photodiodes