Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths

G. Intermite; R. E. Warburton; M. Myronov; P. Allred; D. R. Leadley; K. Gallacher; D. J. Paul; N. J. Pilgrim; L. J M Lever; Z. Ikonic; R. W. Kelsall; G. S. Buller

doi:10.1109/Group4.2013.6644406

Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths

G. Intermite
, R. E. Warburton
, M. Myronov
, P. Allred
, D. R. Leadley
, K. Gallacher
, D. J. Paul
, N. J. Pilgrim
, L. J M Lever
, Z. Ikonic
, R. W. Kelsall
, G. S. Buller

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Ge-on-Si single-photon detectors are fabricated and characterized at 1310 and 1550 nm. 4 % single-photon detection efficiency is observed at 1310 nm demonstrating the lowest reported noise equivalent power for Ge-on-Si single-photon detectors (1×10^-14 WHz^-1/2).

Original language	English
Title of host publication	IEEE International Conference on Group IV Photonics GFP
Publisher	IEEE
Pages	132-133
Number of pages	2
ISBN (Print)	978-1-4673-5803-3
DOIs	https://doi.org/10.1109/Group4.2013.6644406
Publication status	Published - 31 Dec 2013
Event	2013 IEEE 10th International Conference on Group IV Photonics - Seoul, Korea, Republic of Duration: 28 Aug 2013 → 30 Aug 2013

Conference

Conference	2013 IEEE 10th International Conference on Group IV Photonics
Abbreviated title	GFP 2013
Country/Territory	Korea, Republic of
City	Seoul
Period	28/08/13 → 30/08/13

ASJC Scopus subject areas

Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials

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10.1109/Group4.2013.6644406

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Intermite, G., Warburton, R. E., Myronov, M., Allred, P., Leadley, D. R., Gallacher, K., Paul, D. J., Pilgrim, N. J., Lever, L. J. M., Ikonic, Z., Kelsall, R. W., & Buller, G. S. (2013). Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths. In IEEE International Conference on Group IV Photonics GFP (pp. 132-133). Article 6644406 IEEE. https://doi.org/10.1109/Group4.2013.6644406

@inproceedings{ede15498bb9c4f9c9322b7d0c8bb9107,

title = "Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths",

abstract = "Ge-on-Si single-photon detectors are fabricated and characterized at 1310 and 1550 nm. 4 \% single-photon detection efficiency is observed at 1310 nm demonstrating the lowest reported noise equivalent power for Ge-on-Si single-photon detectors (1×10-14 WHz-1/2).",

author = "G. Intermite and Warburton, \{R. E.\} and M. Myronov and P. Allred and Leadley, \{D. R.\} and K. Gallacher and Paul, \{D. J.\} and Pilgrim, \{N. J.\} and Lever, \{L. J M\} and Z. Ikonic and Kelsall, \{R. W.\} and Buller, \{G. S.\}",

year = "2013",

month = dec,

day = "31",

doi = "10.1109/Group4.2013.6644406",

language = "English",

isbn = "978-1-4673-5803-3 ",

pages = "132--133",

booktitle = "IEEE International Conference on Group IV Photonics GFP",

publisher = "IEEE",

address = "United States",

note = "2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013 ; Conference date: 28-08-2013 Through 30-08-2013",

}

Intermite, G, Warburton, RE, Myronov, M, Allred, P, Leadley, DR, Gallacher, K, Paul, DJ, Pilgrim, NJ, Lever, LJM, Ikonic, Z, Kelsall, RW & Buller, GS 2013, Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths. in IEEE International Conference on Group IV Photonics GFP., 6644406, IEEE, pp. 132-133, 2013 IEEE 10th International Conference on Group IV Photonics, Seoul, Korea, Republic of, 28/08/13. https://doi.org/10.1109/Group4.2013.6644406

TY - GEN

T1 - Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths

AU - Intermite, G.

AU - Warburton, R. E.

AU - Myronov, M.

AU - Allred, P.

AU - Leadley, D. R.

AU - Gallacher, K.

AU - Paul, D. J.

AU - Pilgrim, N. J.

AU - Lever, L. J M

AU - Ikonic, Z.

AU - Kelsall, R. W.

AU - Buller, G. S.

PY - 2013/12/31

Y1 - 2013/12/31

N2 - Ge-on-Si single-photon detectors are fabricated and characterized at 1310 and 1550 nm. 4 % single-photon detection efficiency is observed at 1310 nm demonstrating the lowest reported noise equivalent power for Ge-on-Si single-photon detectors (1×10-14 WHz-1/2).

AB - Ge-on-Si single-photon detectors are fabricated and characterized at 1310 and 1550 nm. 4 % single-photon detection efficiency is observed at 1310 nm demonstrating the lowest reported noise equivalent power for Ge-on-Si single-photon detectors (1×10-14 WHz-1/2).

UR - https://www.scopus.com/pages/publications/84891116384

U2 - 10.1109/Group4.2013.6644406

DO - 10.1109/Group4.2013.6644406

M3 - Conference contribution

AN - SCOPUS:84891116384

SN - 978-1-4673-5803-3

SP - 132

EP - 133

BT - IEEE International Conference on Group IV Photonics GFP

PB - IEEE

T2 - 2013 IEEE 10th International Conference on Group IV Photonics

Y2 - 28 August 2013 through 30 August 2013

ER -

Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths

Abstract

Conference

ASJC Scopus subject areas

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