Abstract
Ge-on-Si single-photon detectors are fabricated and characterized at 1310 and 1550 nm. 4 % single-photon detection efficiency is observed at 1310 nm demonstrating the lowest reported noise equivalent power for Ge-on-Si single-photon detectors (1×10-14 WHz-1/2).
Original language | English |
---|---|
Title of host publication | IEEE International Conference on Group IV Photonics GFP |
Publisher | IEEE |
Pages | 132-133 |
Number of pages | 2 |
ISBN (Print) | 978-1-4673-5803-3 |
DOIs | |
Publication status | Published - 31 Dec 2013 |
Event | 2013 IEEE 10th International Conference on Group IV Photonics - Seoul, Korea, Republic of Duration: 28 Aug 2013 → 30 Aug 2013 |
Conference
Conference | 2013 IEEE 10th International Conference on Group IV Photonics |
---|---|
Abbreviated title | GFP 2013 |
Country/Territory | Korea, Republic of |
City | Seoul |
Period | 28/08/13 → 30/08/13 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials