Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths

G. Intermite, R. E. Warburton, M. Myronov, P. Allred, D. R. Leadley, K. Gallacher, D. J. Paul, N. J. Pilgrim, L. J M Lever, Z. Ikonic, R. W. Kelsall, G. S. Buller

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ge-on-Si single-photon detectors are fabricated and characterized at 1310 and 1550 nm. 4 % single-photon detection efficiency is observed at 1310 nm demonstrating the lowest reported noise equivalent power for Ge-on-Si single-photon detectors (1×10-14 WHz-1/2).

Original languageEnglish
Title of host publicationIEEE International Conference on Group IV Photonics GFP
PublisherIEEE
Pages132-133
Number of pages2
ISBN (Print)978-1-4673-5803-3
DOIs
Publication statusPublished - 31 Dec 2013
Event2013 IEEE 10th International Conference on Group IV Photonics - Seoul, Korea, Republic of
Duration: 28 Aug 201330 Aug 2013

Conference

Conference2013 IEEE 10th International Conference on Group IV Photonics
Abbreviated titleGFP 2013
CountryKorea, Republic of
CitySeoul
Period28/08/1330/08/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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