Design and analysis of UHF micropower CMOS DTMOST rectifiers

Ying Khai Teh; Faisal Mohd-Yasin; Florence Choong; Mamun Ibne Reaz; Albert V. Kordesch

doi:10.1109/TCSII.2008.2010190

Design and analysis of UHF micropower CMOS DTMOST rectifiers

Ying Khai Teh^*, Faisal Mohd-Yasin, Florence Choong, Mamun Ibne Reaz, Albert V. Kordesch

^*Corresponding author for this work

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Design and analysis of ultrahigh-frequency (UHF) micropower rectifiers based on a diode-connected dynamic threshold MOSFET (DTMOST) is discussed. An analytical design model for DTMOST rectifiers is derived based on curve-fitted diode equation parameters. Several DTMOST six-stage charge-pump rectifiers were designed and fabricated using a CMOS 0.18-μm process with deep n-well isolation. Measured results verified the design model with average accuracy of 10.85% for an input power level between -4 and 0 dBm. At the same time, three other rectifiers based on various types of transistors were fabricated on the same chip. The measured results are compared with a Schottky diode solution.

Original language	English
Pages (from-to)	122-126
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	56
Issue number	2
DOIs	https://doi.org/10.1109/TCSII.2008.2010190
Publication status	Published - Feb 2009

Keywords

CMOS analog circuits
Integrated circuit modeling
Rectifiers
Ultrahigh-frequency (UHF) integrated circuits

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/TCSII.2008.2010190

Cite this

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title = "Design and analysis of UHF micropower CMOS DTMOST rectifiers",

abstract = "Design and analysis of ultrahigh-frequency (UHF) micropower rectifiers based on a diode-connected dynamic threshold MOSFET (DTMOST) is discussed. An analytical design model for DTMOST rectifiers is derived based on curve-fitted diode equation parameters. Several DTMOST six-stage charge-pump rectifiers were designed and fabricated using a CMOS 0.18-μm process with deep n-well isolation. Measured results verified the design model with average accuracy of 10.85% for an input power level between -4 and 0 dBm. At the same time, three other rectifiers based on various types of transistors were fabricated on the same chip. The measured results are compared with a Schottky diode solution.",

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AU - Kordesch, Albert V.

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AB - Design and analysis of ultrahigh-frequency (UHF) micropower rectifiers based on a diode-connected dynamic threshold MOSFET (DTMOST) is discussed. An analytical design model for DTMOST rectifiers is derived based on curve-fitted diode equation parameters. Several DTMOST six-stage charge-pump rectifiers were designed and fabricated using a CMOS 0.18-μm process with deep n-well isolation. Measured results verified the design model with average accuracy of 10.85% for an input power level between -4 and 0 dBm. At the same time, three other rectifiers based on various types of transistors were fabricated on the same chip. The measured results are compared with a Schottky diode solution.

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Design and analysis of UHF micropower CMOS DTMOST rectifiers

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Keywords

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