Abstract
Space charge limited currents (SCLC) have been used to study the density of localised states (DOS) in partially compensated, doped hydrogenated amorphous silicon (a-Si:H). Boron-doped a-Si:H counterdoped with phosphorus shows a different DOS dependence on the lower dopant concentration, compared with phosphorus-doped a-Si:H counterdoped with boron. The difference has been attributed to differences in the hydrogen diffusion coefficient and in the concentration of phosphorus-boron complexes. © 1988.
| Original language | English |
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| Pages (from-to) | 61-64 |
| Number of pages | 4 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 107 |
| Issue number | 1 |
| Publication status | Published - 2 Dec 1988 |