Space charge limited currents (SCLC) have been used to study the density of localised states (DOS) in partially compensated, doped hydrogenated amorphous silicon (a-Si:H). Boron-doped a-Si:H counterdoped with phosphorus shows a different DOS dependence on the lower dopant concentration, compared with phosphorus-doped a-Si:H counterdoped with boron. The difference has been attributed to differences in the hydrogen diffusion coefficient and in the concentration of phosphorus-boron complexes. © 1988.
|Number of pages||4|
|Journal||Journal of Non-Crystalline Solids|
|Publication status||Published - 2 Dec 1988|