Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP

Xin Yi; Shiyu Xie; Baolai Liang; Leh Woon Lim; Xinxin Zhou; Mukul C. Debnath; Diana L. Huffaker; Chee Hing Tan; John P. R. David

doi:10.1038/s41598-018-27507-w

Demonstration of large ionization coefficient ratio in AlAs_0.56Sb_0.44 lattice matched to InP

Xin Yi, Shiyu Xie^*, Baolai Liang, Leh Woon Lim, Xinxin Zhou, Mukul C. Debnath, Diana L. Huffaker, Chee Hing Tan, John P. R. David

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs_0.56Sb_0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ∼p0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon.

Original language	English
Article number	9107
Journal	Scientific Reports
Volume	8
DOIs	https://doi.org/10.1038/s41598-018-27507-w
Publication status	Published - 14 Jun 2018

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@article{759272b3a5124d3ca1867dd17e0ef3cf,

title = "Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP",

abstract = "The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ∼p0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon.",

author = "Xin Yi and Shiyu Xie and Baolai Liang and Lim, {Leh Woon} and Xinxin Zhou and Debnath, {Mukul C.} and Huffaker, {Diana L.} and Tan, {Chee Hing} and David, {John P. R.}",

note = "Funding Information: D.L.H. would like to thank the financial support provided by S{\^e}r Cymru National Research Network in Advanced Engineering and Materials and S.X. acknowledges the financial support by the European regional Development Fund through the Welsh Government. Publisher Copyright: {\textcopyright} 2018 The Author(s).",

year = "2018",

month = jun,

day = "14",

doi = "10.1038/s41598-018-27507-w",

language = "English",

volume = "8",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Research",

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T1 - Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP

AU - Yi, Xin

AU - Xie, Shiyu

AU - Liang, Baolai

AU - Lim, Leh Woon

AU - Zhou, Xinxin

AU - Debnath, Mukul C.

AU - Huffaker, Diana L.

AU - Tan, Chee Hing

AU - David, John P. R.

N1 - Funding Information: D.L.H. would like to thank the financial support provided by Sêr Cymru National Research Network in Advanced Engineering and Materials and S.X. acknowledges the financial support by the European regional Development Fund through the Welsh Government. Publisher Copyright: © 2018 The Author(s).

PY - 2018/6/14

Y1 - 2018/6/14

N2 - The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ∼p0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon.

AB - The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ∼p0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon.

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DO - 10.1038/s41598-018-27507-w

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AN - SCOPUS:85048773789

SN - 2045-2322

VL - 8

JO - Scientific Reports

JF - Scientific Reports

M1 - 9107

ER -

Demonstration of large ionization coefficient ratio in AlAs_0.56Sb_0.44 lattice matched to InP

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