Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP

Xin Yi, Shiyu Xie*, Baolai Liang, Leh Woon Lim, Xinxin Zhou, Mukul C. Debnath, Diana L. Huffaker, Chee Hing Tan, John P. R. David

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ∼p0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon.

Original languageEnglish
Article number9107
JournalScientific Reports
Volume8
DOIs
Publication statusPublished - 14 Jun 2018

ASJC Scopus subject areas

  • General

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