Deep level transient spectroscopy measurements on heterostructure InSb/InAlSb diodes

A. G. Stewart; K. Cherkaoui; R. S. Hall; J. G. Crowder

doi:10.1088/0268-1242/19/3/031

Deep level transient spectroscopy measurements on heterostructure InSb/InAlSb diodes

A. G. Stewart, K. Cherkaoui, R. S. Hall, J. G. Crowder

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Deep level transient spectroscopy (DLTS) measurements have been conducted on MBE-grown heterostructure InSb/In_1-xAl_xSb diodes. The measurements were conducted in the temperature range 10-130 K and two majority carrier (electron) traps, labelled E1 and E2, have been observed. A trap signature has been produced from the DLTS spectra for both traps. The activation energies determined from Arrhenius plots of the peak temperatures as a function of rate window for E1 and E2 were 17 meV and 79 meV, respectively. The apparent capture cross-sections and concentrations for E1 and E2 have also been measured.

Original language	English
Pages (from-to)	468-471
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	19
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/19/3/031
Publication status	Published - Mar 2004

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title = "Deep level transient spectroscopy measurements on heterostructure InSb/InAlSb diodes",

abstract = "Deep level transient spectroscopy (DLTS) measurements have been conducted on MBE-grown heterostructure InSb/In1-xAlxSb diodes. The measurements were conducted in the temperature range 10-130 K and two majority carrier (electron) traps, labelled E1 and E2, have been observed. A trap signature has been produced from the DLTS spectra for both traps. The activation energies determined from Arrhenius plots of the peak temperatures as a function of rate window for E1 and E2 were 17 meV and 79 meV, respectively. The apparent capture cross-sections and concentrations for E1 and E2 have also been measured.",

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T1 - Deep level transient spectroscopy measurements on heterostructure InSb/InAlSb diodes

AU - Stewart, A. G.

AU - Cherkaoui, K.

AU - Hall, R. S.

AU - Crowder, J. G.

PY - 2004/3

Y1 - 2004/3

N2 - Deep level transient spectroscopy (DLTS) measurements have been conducted on MBE-grown heterostructure InSb/In1-xAlxSb diodes. The measurements were conducted in the temperature range 10-130 K and two majority carrier (electron) traps, labelled E1 and E2, have been observed. A trap signature has been produced from the DLTS spectra for both traps. The activation energies determined from Arrhenius plots of the peak temperatures as a function of rate window for E1 and E2 were 17 meV and 79 meV, respectively. The apparent capture cross-sections and concentrations for E1 and E2 have also been measured.

AB - Deep level transient spectroscopy (DLTS) measurements have been conducted on MBE-grown heterostructure InSb/In1-xAlxSb diodes. The measurements were conducted in the temperature range 10-130 K and two majority carrier (electron) traps, labelled E1 and E2, have been observed. A trap signature has been produced from the DLTS spectra for both traps. The activation energies determined from Arrhenius plots of the peak temperatures as a function of rate window for E1 and E2 were 17 meV and 79 meV, respectively. The apparent capture cross-sections and concentrations for E1 and E2 have also been measured.

UR - https://www.scopus.com/pages/publications/1642298163

U2 - 10.1088/0268-1242/19/3/031

DO - 10.1088/0268-1242/19/3/031

M3 - Article

SN - 0268-1242

VL - 19

SP - 468

EP - 471

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

ER -

Deep level transient spectroscopy measurements on heterostructure InSb/InAlSb diodes

Abstract

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