Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes

Derek C. S. Dumas; Conor Coughlan; Charlie Smith; Muhammad M. Mirza; Jarosław Kirdoda; Fiona Fleming; Charlie McCarthy; Hannah Mowbray; Xin Yi; Lisa Saalbach; Gerald Stuart Buller; Douglas J. Paul; Ross W. Millar

doi:10.1117/12.3001450

Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes

Derek C. S. Dumas, Conor Coughlan, Charlie Smith, Muhammad M. Mirza, Jarosław Kirdoda, Fiona Fleming, Charlie McCarthy, Hannah Mowbray, Xin Yi, Lisa Saalbach, Gerald Stuart Buller, Douglas J. Paul^*, Ross W. Millar^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Abstract

Single Photon Avalanche Diodes (SPADs) are semiconductor devices capable of accurately timing the arrival of single photons of light. Previously, we have demonstrated a pseudo-planar Ge-on-Si SPAD that operates in the short-wave infrared, which can be compatible with Si foundry processing. Here, we investigate the pseudo-planar design with simulation and experiment to establish the spatial contributions to the dark-count rate, which will ultimately facilitate optimisation towards operation at temperatures compatible with Peltier cooler technologies.

Original language	English
Title of host publication	Quantum Sensing and Nano Electronics and Photonics XX
Publisher	SPIE
ISBN (Print)	9781510670501
DOIs	https://doi.org/10.1117/12.3001450
Publication status	Published - 8 Mar 2024
Event	Quantum Sensing and Nano Electronics and Photonics XX - San Francisco, United States Duration: 27 Jan 2024 → 1 Feb 2024 Conference number: 20 https://www.spiedigitallibrary.org/conference-proceedings-of-spie/PC12895.toc

Publication series

Name	Proceedings SPIE
Publisher	SPIE
Volume	12895
ISSN (Print)	0277-786X

Conference

Conference	Quantum Sensing and Nano Electronics and Photonics XX
Abbreviated title	SPIE OPTO
Country/Territory	United States
City	San Francisco
Period	27/01/24 → 1/02/24
Internet address	https://www.spiedigitallibrary.org/conference-proceedings-of-spie/PC12895.toc

Keywords

Single photon avalanche diode
Ge-on-Si
device simulation
Si Photonics

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Copyright 2024 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. Proceedings Volume 12274, Emerging Imaging and Sensing Technologies for Security and Defence VII; 122740J (2022) https://doi.org/10.1117/12.2643396
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Cite this

Dumas, D. C. S., Coughlan, C., Smith, C., Mirza, M. M., Kirdoda, J., Fleming, F., McCarthy, C., Mowbray, H., Yi, X., Saalbach, L., Buller, G. S., Paul, D. J., & Millar, R. W. (2024). Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes. In Quantum Sensing and Nano Electronics and Photonics XX Article 1289505 (Proceedings SPIE; Vol. 12895). SPIE. https://doi.org/10.1117/12.3001450

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title = "Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes",

abstract = "Single Photon Avalanche Diodes (SPADs) are semiconductor devices capable of accurately timing the arrival of single photons of light. Previously, we have demonstrated a pseudo-planar Ge-on-Si SPAD that operates in the short-wave infrared, which can be compatible with Si foundry processing. Here, we investigate the pseudo-planar design with simulation and experiment to establish the spatial contributions to the dark-count rate, which will ultimately facilitate optimisation towards operation at temperatures compatible with Peltier cooler technologies.",

keywords = "Single photon avalanche diode, Ge-on-Si, device simulation, Si Photonics",

author = "Dumas, {Derek C. S.} and Conor Coughlan and Charlie Smith and Mirza, {Muhammad M.} and Jaros{\l}aw Kirdoda and Fiona Fleming and Charlie McCarthy and Hannah Mowbray and Xin Yi and Lisa Saalbach and Buller, {Gerald Stuart} and Paul, {Douglas J.} and Millar, {Ross W.}",

year = "2024",

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language = "English",

isbn = "9781510670501",

series = "Proceedings SPIE",

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booktitle = "Quantum Sensing and Nano Electronics and Photonics XX",

address = "United States",

note = "Quantum Sensing and Nano Electronics and Photonics XX, SPIE OPTO ; Conference date: 27-01-2024 Through 01-02-2024",

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Dumas, DCS, Coughlan, C, Smith, C, Mirza, MM, Kirdoda, J, Fleming, F, McCarthy, C, Mowbray, H, Yi, X , Saalbach, L , Buller, GS, Paul, DJ & Millar, RW 2024, Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes. in Quantum Sensing and Nano Electronics and Photonics XX., 1289505, Proceedings SPIE, vol. 12895, SPIE, Quantum Sensing and Nano Electronics and Photonics XX, San Francisco, California, United States, 27/01/24. https://doi.org/10.1117/12.3001450

TY - GEN

T1 - Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes

AU - Dumas, Derek C. S.

AU - Coughlan, Conor

AU - Smith, Charlie

AU - Mirza, Muhammad M.

AU - Kirdoda, Jarosław

AU - Fleming, Fiona

AU - McCarthy, Charlie

AU - Mowbray, Hannah

AU - Yi, Xin

AU - Saalbach, Lisa

AU - Buller, Gerald Stuart

AU - Paul, Douglas J.

AU - Millar, Ross W.

N1 - Conference code: 20

PY - 2024/3/8

Y1 - 2024/3/8

N2 - Single Photon Avalanche Diodes (SPADs) are semiconductor devices capable of accurately timing the arrival of single photons of light. Previously, we have demonstrated a pseudo-planar Ge-on-Si SPAD that operates in the short-wave infrared, which can be compatible with Si foundry processing. Here, we investigate the pseudo-planar design with simulation and experiment to establish the spatial contributions to the dark-count rate, which will ultimately facilitate optimisation towards operation at temperatures compatible with Peltier cooler technologies.

AB - Single Photon Avalanche Diodes (SPADs) are semiconductor devices capable of accurately timing the arrival of single photons of light. Previously, we have demonstrated a pseudo-planar Ge-on-Si SPAD that operates in the short-wave infrared, which can be compatible with Si foundry processing. Here, we investigate the pseudo-planar design with simulation and experiment to establish the spatial contributions to the dark-count rate, which will ultimately facilitate optimisation towards operation at temperatures compatible with Peltier cooler technologies.

KW - Single photon avalanche diode

KW - Ge-on-Si

KW - device simulation

KW - Si Photonics

U2 - 10.1117/12.3001450

DO - 10.1117/12.3001450

M3 - Conference contribution

SN - 9781510670501

T3 - Proceedings SPIE

BT - Quantum Sensing and Nano Electronics and Photonics XX

PB - SPIE

T2 - Quantum Sensing and Nano Electronics and Photonics XX

Y2 - 27 January 2024 through 1 February 2024

ER -

Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes

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