Decay dynamics of the positively charged exciton in a single charge tunable self-assembled quantum dot

P. A. Dalgarno; J. McFarlane; B. D. Gerardot; R. J. Warburton; K. Karrai; A. Badolato; P. M. Petroff

doi:10.1063/1.2234745

Decay dynamics of the positively charged exciton in a single charge tunable self-assembled quantum dot

P. A. Dalgarno, J. McFarlane, B. D. Gerardot, R. J. Warburton, K. Karrai, A. Badolato, P. M. Petroff

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11 Citations (Scopus)

Abstract

We report on the decay dynamics of positively charged excitons confined to single InAs quantum dots embedded in an n-type field-effect structure. The positively charged exciton's dynamics are found to be strongly dependent on device dimensions. With a large (small) dot capping layer the decay is dominated by hole tunneling (radiative recombination). The hole tunneling is successfully modeled with a WKB-like zero-dimensional to three-dimensional tunneling approximation. Hole tunneling is not observed in the dynamics of the neutral exciton negatively charged exciton, or biexciton, an effect we attribute to an increase in barrier height through the interdot Coulomb interactions. © 2006 American Institute of Physics.

Original language	English
Article number	043107
Pages (from-to)	-
Number of pages	3
Journal	Applied Physics Letters
Volume	89
Issue number	4
DOIs	https://doi.org/10.1063/1.2234745
Publication status	Published - 24 Jul 2006

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abstract = "We report on the decay dynamics of positively charged excitons confined to single InAs quantum dots embedded in an n-type field-effect structure. The positively charged exciton's dynamics are found to be strongly dependent on device dimensions. With a large (small) dot capping layer the decay is dominated by hole tunneling (radiative recombination). The hole tunneling is successfully modeled with a WKB-like zero-dimensional to three-dimensional tunneling approximation. Hole tunneling is not observed in the dynamics of the neutral exciton negatively charged exciton, or biexciton, an effect we attribute to an increase in barrier height through the interdot Coulomb interactions. {\textcopyright} 2006 American Institute of Physics.",

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AU - Gerardot, B. D.

AU - Warburton, R. J.

AU - Karrai, K.

AU - Badolato, A.

AU - Petroff, P. M.

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N2 - We report on the decay dynamics of positively charged excitons confined to single InAs quantum dots embedded in an n-type field-effect structure. The positively charged exciton's dynamics are found to be strongly dependent on device dimensions. With a large (small) dot capping layer the decay is dominated by hole tunneling (radiative recombination). The hole tunneling is successfully modeled with a WKB-like zero-dimensional to three-dimensional tunneling approximation. Hole tunneling is not observed in the dynamics of the neutral exciton negatively charged exciton, or biexciton, an effect we attribute to an increase in barrier height through the interdot Coulomb interactions. © 2006 American Institute of Physics.

AB - We report on the decay dynamics of positively charged excitons confined to single InAs quantum dots embedded in an n-type field-effect structure. The positively charged exciton's dynamics are found to be strongly dependent on device dimensions. With a large (small) dot capping layer the decay is dominated by hole tunneling (radiative recombination). The hole tunneling is successfully modeled with a WKB-like zero-dimensional to three-dimensional tunneling approximation. Hole tunneling is not observed in the dynamics of the neutral exciton negatively charged exciton, or biexciton, an effect we attribute to an increase in barrier height through the interdot Coulomb interactions. © 2006 American Institute of Physics.

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Decay dynamics of the positively charged exciton in a single charge tunable self-assembled quantum dot

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