Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots

A. J. Ramsay, AchantaVenu Gopal, E. M. Gauger, Ahsan Nazir, B. W. Lovett, A. M. Fox, M. S. Skolnick

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Abstract

We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.

Original languageEnglish
Article number017402
Number of pages4
JournalPhysical Review Letters
Volume104
Issue number1
DOIs
Publication statusPublished - 8 Jan 2010

Cite this

Ramsay, A. J., Gopal, A., Gauger, E. M., Nazir, A., Lovett, B. W., Fox, A. M., & Skolnick, M. S. (2010). Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots. Physical Review Letters, 104(1), [017402]. https://doi.org/10.1103/PhysRevLett.104.017402