Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots

A. J. Ramsay; AchantaVenu Gopal; E. M. Gauger; Ahsan Nazir; B. W. Lovett; A. M. Fox; M. S. Skolnick

doi:10.1103/PhysRevLett.104.017402

Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots

A. J. Ramsay, AchantaVenu Gopal, E. M. Gauger, Ahsan Nazir, B. W. Lovett, A. M. Fox, M. S. Skolnick

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Abstract

We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.

Original language	English
Article number	017402
Number of pages	4
Journal	Physical Review Letters
Volume	104
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevLett.104.017402
Publication status	Published - 8 Jan 2010

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title = "Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots",

abstract = "We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.",

author = "Ramsay, {A. J.} and AchantaVenu Gopal and Gauger, {E. M.} and Ahsan Nazir and Lovett, {B. W.} and Fox, {A. M.} and Skolnick, {M. S.}",

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AU - Ramsay, A. J.

AU - Gopal, AchantaVenu

AU - Gauger, E. M.

AU - Nazir, Ahsan

AU - Lovett, B. W.

AU - Fox, A. M.

AU - Skolnick, M. S.

PY - 2010/1/8

Y1 - 2010/1/8

N2 - We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.

AB - We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.

U2 - 10.1103/PhysRevLett.104.017402

DO - 10.1103/PhysRevLett.104.017402

M3 - Article

SN - 0031-9007

VL - 104

JO - Physical Review Letters

JF - Physical Review Letters

IS - 1

M1 - 017402

ER -

Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots

Abstract

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