TY - GEN
T1 - CuInS2 layer deposition through nebulizer spray technique for solar cell fabrication
AU - Ravi Dhas, C.
AU - Jennifer Christy, A.
AU - Venkatesh, R.
AU - Anitha, B.
AU - Juliat Josephine, A.
AU - David Kirubakaran, D.
AU - Arivukarasan, D.
AU - Sudhagar, P.
AU - Moses Ezhil Raj, A.
AU - Sanjeeviraja, C.
N1 - Funding Information:
This work was financially supported by the University Grants Commission, New Delhi, India [F.no. 42-903/2013(SR)] under Major Research Project Scheme (MRP). The authors would like to record their sincere thanks to the Commission.
Publisher Copyright:
© Springer International Publishing Switzerland 2017.
PY - 2017/5/4
Y1 - 2017/5/4
N2 - CuInS2 (CIS) thin films were fabricated by jet nebulizer spray technique at various substrate temperatures such as 250, 300, 350 and 400 °C. The XRD revealed the formation of chalcopyrite crystalline phase with (1 1 2) preferential orientation. The film prepared at 300 °C has better crystallinity with minimum dislocation density and strain. The microstructure of the prepared CIS thin films was investigated by means of scanning electron microscope (SEM). The elemental quantification and stoichiometric ratio of the CIS films were confirmed by EDS. The conductivity of CIS thin films was carried out by four probe method and it showed that all the films were in semiconducting nature. The optical band gap was found using Tauc plot and it was varied from 1.3 to 1.45 eV. A peak around 298 cm−1 was observed in Raman spectra attributed to the mixture of both CH- and CA-ordering.
AB - CuInS2 (CIS) thin films were fabricated by jet nebulizer spray technique at various substrate temperatures such as 250, 300, 350 and 400 °C. The XRD revealed the formation of chalcopyrite crystalline phase with (1 1 2) preferential orientation. The film prepared at 300 °C has better crystallinity with minimum dislocation density and strain. The microstructure of the prepared CIS thin films was investigated by means of scanning electron microscope (SEM). The elemental quantification and stoichiometric ratio of the CIS films were confirmed by EDS. The conductivity of CIS thin films was carried out by four probe method and it showed that all the films were in semiconducting nature. The optical band gap was found using Tauc plot and it was varied from 1.3 to 1.45 eV. A peak around 298 cm−1 was observed in Raman spectra attributed to the mixture of both CH- and CA-ordering.
UR - http://www.scopus.com/inward/record.url?scp=85019226600&partnerID=8YFLogxK
U2 - 10.1007/978-3-319-44890-9_41
DO - 10.1007/978-3-319-44890-9_41
M3 - Conference contribution
AN - SCOPUS:85019226600
SN - 9783319448893
T3 - Springer Proceedings in Physics
SP - 451
EP - 464
BT - Recent Trends in Materials Science and Applications
A2 - Ebenezar, Jeyasingh
PB - Springer
T2 - International Conference on Recent Trends in Materials Science and Applications 2016
Y2 - 29 February 2016 through 29 February 2016
ER -