Coulomb blockade of spin-dependent shuttling

Hee Chul Park, Anatoli M Kadigrobov, Robert I Shekhter, Mats Jonson

Research output: Contribution to journalArticlepeer-review


We show that nanomechanical shuttling of single electrons may enable qualitatively new functionality if spin-polarized electrons are injected into a nanoelectromechanical single-electron tunneling (NEM-SET) device. This is due to the combined effects of spin-dependent electron tunneling and Coulomb blockade of tunneling, which are phenomena that occur in certain magnetic NEM-SET devices. Two effects are predicted to occur in such structures. The first is a reentrant shuttle instability, by which we mean the sequential appearance, disappearance and again the appearance of a shuttle instability as the driving voltage is increased (or the mechanical dissipation is diminished). The second effect is an enhanced spin polarization of the nanomechanically assisted current flow.
Original languageEnglish
Pages (from-to)1071-1077
Number of pages7
JournalLow Temperature Physics
Issue number12
Publication statusPublished - Dec 2013


  • nanoelectromechanics
  • single-electron tunneling
  • Coulomb blockade


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