A cw CO2 laser has been used to grow small silicon oxide deposits on heated Si wafers. These oxides have similar electrical properties to furnace-grown SiO2, and have been used in rectifying diodes. Their infrared absorption band at 1070 cm-1 is narrower than for conventional SiO2 on Si wafers, and their refractive index is 1.465 ± 0.01 for thicknesses of 40 nm to 140 nm. © 1983.
|Number of pages||3|
|Journal||Physica B and C|
|Issue number||PART 2|
|Publication status||Published - Mar 1983|