CO2 laser oxidation of silicon

I. W. Boyd; J. I B Wilson

CO₂ laser oxidation of silicon

I. W. Boyd, J. I B Wilson

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A cw CO₂ laser has been used to grow small silicon oxide deposits on heated Si wafers. These oxides have similar electrical properties to furnace-grown SiO₂, and have been used in rectifying diodes. Their infrared absorption band at 1070 cm^-1 is narrower than for conventional SiO₂ on Si wafers, and their refractive index is 1.465 ± 0.01 for thicknesses of 40 nm to 140 nm. © 1983.

Original language	English
Pages (from-to)	1030-1032
Number of pages	3
Journal	Physica B and C
Volume	117-118
Issue number	PART 2
Publication status	Published - Mar 1983

Cite this

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title = "CO2 laser oxidation of silicon",

abstract = "A cw CO2 laser has been used to grow small silicon oxide deposits on heated Si wafers. These oxides have similar electrical properties to furnace-grown SiO2, and have been used in rectifying diodes. Their infrared absorption band at 1070 cm-1 is narrower than for conventional SiO2 on Si wafers, and their refractive index is 1.465 ± 0.01 for thicknesses of 40 nm to 140 nm. {\textcopyright} 1983.",

author = "Boyd, {I. W.} and Wilson, {J. I B}",

year = "1983",

month = mar,

language = "English",

volume = "117-118",

pages = "1030--1032",

journal = "Physica B and C",

issn = "0378-4363",

publisher = "North-Holland Publ Co",

number = "PART 2",

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TY - JOUR

T1 - CO2 laser oxidation of silicon

AU - Boyd, I. W.

AU - Wilson, J. I B

PY - 1983/3

Y1 - 1983/3

N2 - A cw CO2 laser has been used to grow small silicon oxide deposits on heated Si wafers. These oxides have similar electrical properties to furnace-grown SiO2, and have been used in rectifying diodes. Their infrared absorption band at 1070 cm-1 is narrower than for conventional SiO2 on Si wafers, and their refractive index is 1.465 ± 0.01 for thicknesses of 40 nm to 140 nm. © 1983.

AB - A cw CO2 laser has been used to grow small silicon oxide deposits on heated Si wafers. These oxides have similar electrical properties to furnace-grown SiO2, and have been used in rectifying diodes. Their infrared absorption band at 1070 cm-1 is narrower than for conventional SiO2 on Si wafers, and their refractive index is 1.465 ± 0.01 for thicknesses of 40 nm to 140 nm. © 1983.

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M3 - Article

SN - 0378-4363

VL - 117-118

SP - 1030

EP - 1032

JO - Physica B and C

JF - Physica B and C

IS - PART 2

ER -

CO₂ laser oxidation of silicon

Abstract

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