CO2 laser oxidation of silicon

I. W. Boyd, J. I B Wilson

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A cw CO2 laser has been used to grow small silicon oxide deposits on heated Si wafers. These oxides have similar electrical properties to furnace-grown SiO2, and have been used in rectifying diodes. Their infrared absorption band at 1070 cm-1 is narrower than for conventional SiO2 on Si wafers, and their refractive index is 1.465 ± 0.01 for thicknesses of 40 nm to 140 nm. © 1983.

Original languageEnglish
Pages (from-to)1030-1032
Number of pages3
JournalPhysica B and C
Issue numberPART 2
Publication statusPublished - Mar 1983


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