CO2 laser oxidation of silicon

I. W. Boyd, J. I B Wilson

Research output: Contribution to journalArticle

Abstract

A cw CO2 laser has been used to grow small silicon oxide deposits on heated Si wafers. These oxides have similar electrical properties to furnace-grown SiO2, and have been used in rectifying diodes. Their infrared absorption band at 1070 cm-1 is narrower than for conventional SiO2 on Si wafers, and their refractive index is 1.465 ± 0.01 for thicknesses of 40 nm to 140 nm. © 1983.

Original languageEnglish
Pages (from-to)1030-1032
Number of pages3
JournalPhysica B and C
Volume117-118
Issue numberPART 2
Publication statusPublished - Mar 1983

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    Boyd, I. W., & Wilson, J. I. B. (1983). CO2 laser oxidation of silicon. Physica B and C, 117-118(PART 2), 1030-1032.