Controlled polarisation of silicon isolated double quantum dots with remote charge sensing for qubit use

M. G. Tanner; G. Podd; P. Chapman; D. A. Williams

doi:10.1142/9789814282130_0052

Controlled polarisation of silicon isolated double quantum dots with remote charge sensing for qubit use

M. G. Tanner, G. Podd, P. Chapman, D. A. Williams

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Nanometre scale quantum dot devices in silicon consisting of a single electron transistor and an isolated double quantum dot with multiple control gates have been fabricated. The polarisation of the double dot when biased with the control gates has been observed indirectly through its effect on the conduction in the single electron transistor. Simulation has confirmed the experimental results and aided in determining the mechanism of this effect. This work demonstrates the possibility of using the isolated double quantum dot as a charge qubit.

Original language	English
Title of host publication	Foundations of Quantum Mechanics in the Light of New Technology
Publisher	World Scientific Publishing
Pages	239-242
Number of pages	4
ISBN (Electronic)	9789814467032
ISBN (Print)	9789814282123
DOIs	https://doi.org/10.1142/9789814282130_0052
Publication status	Published - Jun 2009
Event	9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008 - Hatoyama, Saitama, Japan Duration: 25 Aug 2008 → 28 Aug 2008

Conference

Conference	9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008
Abbreviated title	ISQM-Tokyo 2008
Country/Territory	Japan
City	Hatoyama, Saitama
Period	25/08/08 → 28/08/08

Keywords

Quantum dot
Quantum information
Silicon

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1142/9789814282130_0052

Cite this

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title = "Controlled polarisation of silicon isolated double quantum dots with remote charge sensing for qubit use",

abstract = "Nanometre scale quantum dot devices in silicon consisting of a single electron transistor and an isolated double quantum dot with multiple control gates have been fabricated. The polarisation of the double dot when biased with the control gates has been observed indirectly through its effect on the conduction in the single electron transistor. Simulation has confirmed the experimental results and aided in determining the mechanism of this effect. This work demonstrates the possibility of using the isolated double quantum dot as a charge qubit.",

keywords = "Quantum dot, Quantum information, Silicon",

author = "Tanner, {M. G.} and G. Podd and P. Chapman and Williams, {D. A.}",

year = "2009",

month = jun,

doi = "10.1142/9789814282130_0052",

language = "English",

isbn = "9789814282123",

pages = "239--242",

booktitle = "Foundations of Quantum Mechanics in the Light of New Technology",

publisher = "World Scientific Publishing",

note = "9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008, ISQM-Tokyo 2008 ; Conference date: 25-08-2008 Through 28-08-2008",

}

Tanner, MG, Podd, G, Chapman, P & Williams, DA 2009, Controlled polarisation of silicon isolated double quantum dots with remote charge sensing for qubit use. in Foundations of Quantum Mechanics in the Light of New Technology. World Scientific Publishing, pp. 239-242, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008, Hatoyama, Saitama, Japan, 25/08/08. https://doi.org/10.1142/9789814282130_0052

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AU - Podd, G.

AU - Chapman, P.

AU - Williams, D. A.

PY - 2009/6

Y1 - 2009/6

N2 - Nanometre scale quantum dot devices in silicon consisting of a single electron transistor and an isolated double quantum dot with multiple control gates have been fabricated. The polarisation of the double dot when biased with the control gates has been observed indirectly through its effect on the conduction in the single electron transistor. Simulation has confirmed the experimental results and aided in determining the mechanism of this effect. This work demonstrates the possibility of using the isolated double quantum dot as a charge qubit.

AB - Nanometre scale quantum dot devices in silicon consisting of a single electron transistor and an isolated double quantum dot with multiple control gates have been fabricated. The polarisation of the double dot when biased with the control gates has been observed indirectly through its effect on the conduction in the single electron transistor. Simulation has confirmed the experimental results and aided in determining the mechanism of this effect. This work demonstrates the possibility of using the isolated double quantum dot as a charge qubit.

KW - Quantum dot

KW - Quantum information

KW - Silicon

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U2 - 10.1142/9789814282130_0052

DO - 10.1142/9789814282130_0052

M3 - Conference contribution

AN - SCOPUS:84903843053

SN - 9789814282123

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EP - 242

BT - Foundations of Quantum Mechanics in the Light of New Technology

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T2 - 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008

Y2 - 25 August 2008 through 28 August 2008

ER -

Controlled polarisation of silicon isolated double quantum dots with remote charge sensing for qubit use

Abstract

Conference

Keywords

ASJC Scopus subject areas

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