Controlled polarisation of silicon isolated double quantum dots with remote charge sensing for qubit use

M. G. Tanner, G. Podd, P. Chapman, D. A. Williams

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nanometre scale quantum dot devices in silicon consisting of a single electron transistor and an isolated double quantum dot with multiple control gates have been fabricated. The polarisation of the double dot when biased with the control gates has been observed indirectly through its effect on the conduction in the single electron transistor. Simulation has confirmed the experimental results and aided in determining the mechanism of this effect. This work demonstrates the possibility of using the isolated double quantum dot as a charge qubit.

Original languageEnglish
Title of host publicationFoundations of Quantum Mechanics in the Light of New Technology
PublisherWorld Scientific Publishing
Pages239-242
Number of pages4
ISBN (Electronic)9789814467032
ISBN (Print)9789814282123
DOIs
Publication statusPublished - Jun 2009
Event9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008 - Hatoyama, Saitama, Japan
Duration: 25 Aug 200828 Aug 2008

Conference

Conference9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008
Abbreviated titleISQM-Tokyo 2008
CountryJapan
CityHatoyama, Saitama
Period25/08/0828/08/08

Keywords

  • Quantum dot
  • Quantum information
  • Silicon

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Tanner, M. G., Podd, G., Chapman, P., & Williams, D. A. (2009). Controlled polarisation of silicon isolated double quantum dots with remote charge sensing for qubit use. In Foundations of Quantum Mechanics in the Light of New Technology (pp. 239-242). World Scientific Publishing. https://doi.org/10.1142/9789814282130_0052