Abstract
Nanometre scale quantum dot devices in silicon consisting of a single electron transistor and an isolated double quantum dot with multiple control gates have been fabricated. The polarisation of the double dot when biased with the control gates has been observed indirectly through its effect on the conduction in the single electron transistor. Simulation has confirmed the experimental results and aided in determining the mechanism of this effect. This work demonstrates the possibility of using the isolated double quantum dot as a charge qubit.
Original language | English |
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Title of host publication | Foundations of Quantum Mechanics in the Light of New Technology |
Publisher | World Scientific Publishing |
Pages | 239-242 |
Number of pages | 4 |
ISBN (Electronic) | 9789814467032 |
ISBN (Print) | 9789814282123 |
DOIs | |
Publication status | Published - Jun 2009 |
Event | 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008 - Hatoyama, Saitama, Japan Duration: 25 Aug 2008 → 28 Aug 2008 |
Conference
Conference | 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology 2008 |
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Abbreviated title | ISQM-Tokyo 2008 |
Country/Territory | Japan |
City | Hatoyama, Saitama |
Period | 25/08/08 → 28/08/08 |
Keywords
- Quantum dot
- Quantum information
- Silicon
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics