Controlled generation of neutral, negatively charged and positively charged excitons in the same single quantum dot

M. Ediger, P. A. Dalgarno, J. M. Smith, R. J. Warburton, K. Karrai, B. D. Gerardot, P. M. Petroff

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the generation of neutral, negatively charged and positively charged excitons in the same single InAs quantum dot in a controlled manner. The control parameters of the respective excitons are a vertical electric field, applied to a capacitor-like structure in which the quantum dots are embedded, and optical pump power. We have already established that Coulomb blockade can be exploited to control the charge of excitons containing one hole, the neutral exciton, X0, and the singly negatively charged exciton, X 1-. We extend this concept to excitons containing 2 holes, the biexciton, 2X0, and significantly the singly positively charged exciton, X1+. We support these assignments with a Coulomb blockade (CB) model. The emission from X1- is always redshifted from X 0, but surprisingly we observe blue- as well as redshifts for X 1+ from X0. © 2005 American Institute of Physics.

Original languageEnglish
Title of host publicationPhysics of Semiconductors: 27th International Conference on the Physics of Semiconductors, ICPS-27
Pages667-668
Number of pages2
Volume772
DOIs
Publication statusPublished - 30 Jun 2005
Event27th International Conference on the Physics of Semiconductors - Flagstaff, Arizona, Argentina
Duration: 26 Jul 200430 Jul 2004

Conference

Conference27th International Conference on the Physics of Semiconductors
Abbreviated titleICPS-27
CountryArgentina
CityFlagstaff, Arizona
Period26/07/0430/07/04

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    Ediger, M., Dalgarno, P. A., Smith, J. M., Warburton, R. J., Karrai, K., Gerardot, B. D., & Petroff, P. M. (2005). Controlled generation of neutral, negatively charged and positively charged excitons in the same single quantum dot. In Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, ICPS-27 (Vol. 772, pp. 667-668) https://doi.org/10.1063/1.1994282