Controllable charge storage in quantum dots with independent tuning of electric fields

K. S. Gill, N. Moskovitz, L. C. Wang, M. S. Sherwin, A. Badolato, B. Gerardot, P. Petroff

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Abstract

Electrons and holes are loaded into ensembles of InAsGaAs quantum dots using a sequence of near-infrared optical pulses and voltage biases. The number and sign of charge carriers is completely determined by one of the voltage biases in the sequence. The injected charge remains stored in the dots for at least 10 s for a range of independently varied growth-direction electric fields and is detected by purely electrical means. The storage is robust to temperatures exceeding 80 K. © 2005 American Institute of Physics.

Original languageEnglish
Article number162101
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number16
DOIs
Publication statusPublished - 17 Oct 2005

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    Gill, K. S., Moskovitz, N., Wang, L. C., Sherwin, M. S., Badolato, A., Gerardot, B., & Petroff, P. (2005). Controllable charge storage in quantum dots with independent tuning of electric fields. Applied Physics Letters, 87(16), 1-3. [162101]. https://doi.org/10.1063/1.2099519