Abstract
Electrons and holes are loaded into ensembles of InAsGaAs quantum dots using a sequence of near-infrared optical pulses and voltage biases. The number and sign of charge carriers is completely determined by one of the voltage biases in the sequence. The injected charge remains stored in the dots for at least 10 s for a range of independently varied growth-direction electric fields and is detected by purely electrical means. The storage is robust to temperatures exceeding 80 K. © 2005 American Institute of Physics.
Original language | English |
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Article number | 162101 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 16 |
DOIs | |
Publication status | Published - 17 Oct 2005 |