Control of stress in multilayered MEMS devices

Zheng Cui; Ling Wang; Aizi Jin; Jia Sheng Hong

doi:10.1109/NEMS.2006.334703

Control of stress in multilayered MEMS devices

Zheng Cui, Ling Wang, Aizi Jin, Jia Sheng Hong

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Stress issue in multilayered thin film structures has been investigated in the example of RF MEMS switches. Although a sandwiched thin film structure in theory can offset the stress-induced bending of a cantilever beam, it rarely possible to realize such offset because of the complexity in thin film deposition processes. Computer modeling and experiments have been conducted to reduce the unbalance of stress in a sandwiched thin film structure. It has demonstrated that a balance of stress and bending can be achieved by fine adjustment of the thickness of top layer of thin film. ©2006 IEEE.

Original language	English
Title of host publication	Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
Pages	1224-1227
Number of pages	4
DOIs	https://doi.org/10.1109/NEMS.2006.334703
Publication status	Published - 2006
Event	1st IEEE International Conference on Nano Micro Engineered and Molecular Systems - Zhuhai, China Duration: 18 Jan 2006 → 21 Jan 2006

Conference

Conference	1st IEEE International Conference on Nano Micro Engineered and Molecular Systems
Abbreviated title	1st IEEE-NEMS
Country/Territory	China
City	Zhuhai
Period	18/01/06 → 21/01/06

Keywords

RF MEMS
Stress induced bending
Thin film stress

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10.1109/NEMS.2006.334703

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title = "Control of stress in multilayered MEMS devices",

abstract = "Stress issue in multilayered thin film structures has been investigated in the example of RF MEMS switches. Although a sandwiched thin film structure in theory can offset the stress-induced bending of a cantilever beam, it rarely possible to realize such offset because of the complexity in thin film deposition processes. Computer modeling and experiments have been conducted to reduce the unbalance of stress in a sandwiched thin film structure. It has demonstrated that a balance of stress and bending can be achieved by fine adjustment of the thickness of top layer of thin film. {\textcopyright}2006 IEEE.",

keywords = "RF MEMS, Stress induced bending, Thin film stress",

author = "Zheng Cui and Ling Wang and Aizi Jin and Hong, {Jia Sheng}",

year = "2006",

doi = "10.1109/NEMS.2006.334703",

language = "English",

isbn = "1424401402",

pages = "1224--1227",

booktitle = "Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS",

note = "1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS ; Conference date: 18-01-2006 Through 21-01-2006",

}

TY - GEN

T1 - Control of stress in multilayered MEMS devices

AU - Cui, Zheng

AU - Wang, Ling

AU - Jin, Aizi

AU - Hong, Jia Sheng

PY - 2006

Y1 - 2006

N2 - Stress issue in multilayered thin film structures has been investigated in the example of RF MEMS switches. Although a sandwiched thin film structure in theory can offset the stress-induced bending of a cantilever beam, it rarely possible to realize such offset because of the complexity in thin film deposition processes. Computer modeling and experiments have been conducted to reduce the unbalance of stress in a sandwiched thin film structure. It has demonstrated that a balance of stress and bending can be achieved by fine adjustment of the thickness of top layer of thin film. ©2006 IEEE.

AB - Stress issue in multilayered thin film structures has been investigated in the example of RF MEMS switches. Although a sandwiched thin film structure in theory can offset the stress-induced bending of a cantilever beam, it rarely possible to realize such offset because of the complexity in thin film deposition processes. Computer modeling and experiments have been conducted to reduce the unbalance of stress in a sandwiched thin film structure. It has demonstrated that a balance of stress and bending can be achieved by fine adjustment of the thickness of top layer of thin film. ©2006 IEEE.

KW - RF MEMS

KW - Stress induced bending

KW - Thin film stress

UR - http://www.scopus.com/inward/record.url?scp=46149091960&partnerID=8YFLogxK

U2 - 10.1109/NEMS.2006.334703

DO - 10.1109/NEMS.2006.334703

M3 - Conference contribution

SN - 1424401402

SN - 9781424401406

SP - 1224

EP - 1227

BT - Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

T2 - 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems

Y2 - 18 January 2006 through 21 January 2006

ER -

Control of stress in multilayered MEMS devices

Abstract

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Keywords

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