Control of density of CdSe quantum dots grown by MEE on MgS

Akhil Rajan; Richard T. Moug; Ian A. Davidson; Kevin A. Prior

doi:10.1002/pssc.201300567

Control of density of CdSe quantum dots grown by MEE on MgS

Akhil Rajan^*, Richard T. Moug, Ian A. Davidson, Kevin A. Prior

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

CdSe quantum dots were grown on MgS barrier layers by migration enhanced epitaxy. Following depositon of CdSe at 240 °C, the layers were annealed at 320 °C. In this study the annealing time was varied along with a delay time introduced between the CdSe deposition and the high temperature anneal. By varying just these two parameters the CdSe dot density measured by AFM could be varied by one order of magnitude. A short growth delay of just one minute between deposition and annealing was particularly effective and gave the lowest CdSe dot density reported so far of ~40 × 10⁸cm^-2.

Original language	English
Pages (from-to)	1240-1243
Number of pages	4
Journal	Physica Status Solidi C - Current Topics in Solid State Physics
Volume	11
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.201300567
Publication status	Published - 2014

Keywords

AFM
CdSe quantum dots
Density control
Migration enhanced epitaxy
Molecular beam epitaxy

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10.1002/pssc.201300567

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title = "Control of density of CdSe quantum dots grown by MEE on MgS",

abstract = "CdSe quantum dots were grown on MgS barrier layers by migration enhanced epitaxy. Following depositon of CdSe at 240 °C, the layers were annealed at 320 °C. In this study the annealing time was varied along with a delay time introduced between the CdSe deposition and the high temperature anneal. By varying just these two parameters the CdSe dot density measured by AFM could be varied by one order of magnitude. A short growth delay of just one minute between deposition and annealing was particularly effective and gave the lowest CdSe dot density reported so far of ~40 × 108cm-2.",

keywords = "AFM, CdSe quantum dots, Density control, Migration enhanced epitaxy, Molecular beam epitaxy",

author = "Akhil Rajan and Moug, {Richard T.} and Davidson, {Ian A.} and Prior, {Kevin A.}",

year = "2014",

doi = "10.1002/pssc.201300567",

language = "English",

volume = "11",

pages = "1240--1243",

journal = "Physica Status Solidi C - Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7-8",

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TY - JOUR

T1 - Control of density of CdSe quantum dots grown by MEE on MgS

AU - Rajan, Akhil

AU - Moug, Richard T.

AU - Davidson, Ian A.

AU - Prior, Kevin A.

PY - 2014

Y1 - 2014

N2 - CdSe quantum dots were grown on MgS barrier layers by migration enhanced epitaxy. Following depositon of CdSe at 240 °C, the layers were annealed at 320 °C. In this study the annealing time was varied along with a delay time introduced between the CdSe deposition and the high temperature anneal. By varying just these two parameters the CdSe dot density measured by AFM could be varied by one order of magnitude. A short growth delay of just one minute between deposition and annealing was particularly effective and gave the lowest CdSe dot density reported so far of ~40 × 108cm-2.

AB - CdSe quantum dots were grown on MgS barrier layers by migration enhanced epitaxy. Following depositon of CdSe at 240 °C, the layers were annealed at 320 °C. In this study the annealing time was varied along with a delay time introduced between the CdSe deposition and the high temperature anneal. By varying just these two parameters the CdSe dot density measured by AFM could be varied by one order of magnitude. A short growth delay of just one minute between deposition and annealing was particularly effective and gave the lowest CdSe dot density reported so far of ~40 × 108cm-2.

KW - AFM

KW - CdSe quantum dots

KW - Density control

KW - Migration enhanced epitaxy

KW - Molecular beam epitaxy

U2 - 10.1002/pssc.201300567

DO - 10.1002/pssc.201300567

M3 - Article

AN - SCOPUS:84904047415

SN - 1862-6351

VL - 11

SP - 1240

EP - 1243

JO - Physica Status Solidi C - Current Topics in Solid State Physics

JF - Physica Status Solidi C - Current Topics in Solid State Physics

IS - 7-8

ER -

Control of density of CdSe quantum dots grown by MEE on MgS

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Keywords

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