Control of density of CdSe quantum dots grown by MEE on MgS

Akhil Rajan, Richard T. Moug, Ian A. Davidson, Kevin A. Prior

Research output: Contribution to journalArticle

Abstract

CdSe quantum dots were grown on MgS barrier layers by migration enhanced epitaxy. Following depositon of CdSe at 240 °C, the layers were annealed at 320 °C. In this study the annealing time was varied along with a delay time introduced between the CdSe deposition and the high temperature anneal. By varying just these two parameters the CdSe dot density measured by AFM could be varied by one order of magnitude. A short growth delay of just one minute between deposition and annealing was particularly effective and gave the lowest CdSe dot density reported so far of ~40 × 108cm-2.

Original languageEnglish
Pages (from-to)1240-1243
Number of pages4
JournalPhysica Status Solidi C - Current Topics in Solid State Physics
Volume11
Issue number7-8
DOIs
Publication statusPublished - 2014

Keywords

  • AFM
  • CdSe quantum dots
  • Density control
  • Migration enhanced epitaxy
  • Molecular beam epitaxy

Fingerprint Dive into the research topics of 'Control of density of CdSe quantum dots grown by MEE on MgS'. Together they form a unique fingerprint.

  • Cite this