Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation

Ki Yeol Byun; Pete Fleming; Nick Bennett; Farzan Gity; Patrick McNally; Michael Morris; Isabelle Ferain; Cindy Colinge

doi:10.1063/1.3601355

Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation

Ki Yeol Byun^*, Pete Fleming, Nick Bennett, Farzan Gity, Patrick McNally, Michael Morris, Isabelle Ferain, Cindy Colinge

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3601355]

Original language	English
Article number	123529
Number of pages	5
Journal	Journal of Applied Physics
Volume	109
Issue number	12
DOIs	https://doi.org/10.1063/1.3601355
Publication status	Published - 15 Jun 2011

Keywords

ULTRA-HIGH-VACUUM
SILICON
PHOTODETECTORS
SURFACE
LAYERS

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10.1063/1.3601355

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title = "Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation",

abstract = "In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3601355]",

keywords = "ULTRA-HIGH-VACUUM, SILICON, PHOTODETECTORS, SURFACE, LAYERS",

author = "Byun, {Ki Yeol} and Pete Fleming and Nick Bennett and Farzan Gity and Patrick McNally and Michael Morris and Isabelle Ferain and Cindy Colinge",

year = "2011",

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T1 - Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation

AU - Byun, Ki Yeol

AU - Fleming, Pete

AU - Bennett, Nick

AU - Gity, Farzan

AU - McNally, Patrick

AU - Morris, Michael

AU - Ferain, Isabelle

AU - Colinge, Cindy

PY - 2011/6/15

Y1 - 2011/6/15

N2 - In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3601355]

AB - In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3601355]

KW - ULTRA-HIGH-VACUUM

KW - SILICON

KW - PHOTODETECTORS

KW - SURFACE

KW - LAYERS

U2 - 10.1063/1.3601355

DO - 10.1063/1.3601355

M3 - Article

SN - 0021-8979

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 123529

ER -

Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation

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Keywords

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