Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation

Ki Yeol Byun, Pete Fleming, Nick Bennett, Farzan Gity, Patrick McNally, Michael Morris, Isabelle Ferain, Cindy Colinge

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Abstract

In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3601355]

Original languageEnglish
Article number123529
Number of pages5
JournalJournal of Applied Physics
Volume109
Issue number12
DOIs
Publication statusPublished - 15 Jun 2011

Keywords

  • ULTRA-HIGH-VACUUM
  • SILICON
  • PHOTODETECTORS
  • SURFACE
  • LAYERS

Cite this

Byun, K. Y., Fleming, P., Bennett, N., Gity, F., McNally, P., Morris, M., Ferain, I., & Colinge, C. (2011). Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation. Journal of Applied Physics, 109(12), [123529]. https://doi.org/10.1063/1.3601355