Composite gate turn-off thyristor model and its application

Xiangning He, B. W. Williams, T. C. Green

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The paper presents a composite gate turn-off thyristor model, which is based on the combination of the p-n-p and n-p-n transistor models. PSpice simulations and parametric sensitive analysis are performed with the composite model and calculated results are given, which show that it corresponds statically and dynamically with the practical device, and in particular, at turn-off. Furthermore, the model, together with a Mosfet model on the gate, has been applied to a MOS Controlled Thyristor. The simulated results for this model are also presented.

Original languageEnglish
Title of host publicationConference Record - IAS Annual Meeting (IEEE Industry Applications Society)
Pages1202-1207
Number of pages6
Volume2
Publication statusPublished - 1993
EventProceedings of the 28th Annual Meeting of the IEEE Industry Applications Conference - Toronto, Ont, Can
Duration: 3 Oct 19938 Oct 1993

Conference

ConferenceProceedings of the 28th Annual Meeting of the IEEE Industry Applications Conference
CityToronto, Ont, Can
Period3/10/938/10/93

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  • Cite this

    He, X., Williams, B. W., & Green, T. C. (1993). Composite gate turn-off thyristor model and its application. In Conference Record - IAS Annual Meeting (IEEE Industry Applications Society) (Vol. 2, pp. 1202-1207)