Abstract
The paper presents a composite gate turn-off thyristor model, which is based on the combination of the p-n-p and n-p-n transistor models. PSpice simulations and parametric sensitive analysis are performed with the composite model and calculated results are given, which show that it corresponds statically and dynamically with the practical device, and in particular, at turn-off. Furthermore, the model, together with a Mosfet model on the gate, has been applied to a MOS Controlled Thyristor. The simulated results for this model are also presented.
Original language | English |
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Title of host publication | Conference Record - IAS Annual Meeting (IEEE Industry Applications Society) |
Pages | 1202-1207 |
Number of pages | 6 |
Volume | 2 |
Publication status | Published - 1993 |
Event | Proceedings of the 28th Annual Meeting of the IEEE Industry Applications Conference - Toronto, Ont, Can Duration: 3 Oct 1993 → 8 Oct 1993 |
Conference
Conference | Proceedings of the 28th Annual Meeting of the IEEE Industry Applications Conference |
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City | Toronto, Ont, Can |
Period | 3/10/93 → 8/10/93 |