Composite gate turn-off thyristor model and its application

Xiangning He; B. W. Williams; T. C. Green

Composite gate turn-off thyristor model and its application

Xiangning He, B. W. Williams, T. C. Green

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

The paper presents a composite gate turn-off thyristor model, which is based on the combination of the p-n-p and n-p-n transistor models. PSpice simulations and parametric sensitive analysis are performed with the composite model and calculated results are given, which show that it corresponds statically and dynamically with the practical device, and in particular, at turn-off. Furthermore, the model, together with a Mosfet model on the gate, has been applied to a MOS Controlled Thyristor. The simulated results for this model are also presented.

Original language	English
Title of host publication	Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)
Pages	1202-1207
Number of pages	6
Volume	2
Publication status	Published - 1993
Event	Proceedings of the 28th Annual Meeting of the IEEE Industry Applications Conference - Toronto, Ont, Can Duration: 3 Oct 1993 → 8 Oct 1993

Conference

Conference	Proceedings of the 28th Annual Meeting of the IEEE Industry Applications Conference
City	Toronto, Ont, Can
Period	3/10/93 → 8/10/93

Cite this

@inproceedings{606e572a5b934f06aa21093c0738f08a,

title = "Composite gate turn-off thyristor model and its application",

abstract = "The paper presents a composite gate turn-off thyristor model, which is based on the combination of the p-n-p and n-p-n transistor models. PSpice simulations and parametric sensitive analysis are performed with the composite model and calculated results are given, which show that it corresponds statically and dynamically with the practical device, and in particular, at turn-off. Furthermore, the model, together with a Mosfet model on the gate, has been applied to a MOS Controlled Thyristor. The simulated results for this model are also presented.",

author = "Xiangning He and Williams, {B. W.} and Green, {T. C.}",

year = "1993",

language = "English",

isbn = "078031462X",

volume = "2",

pages = "1202--1207",

booktitle = "Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)",

note = "Proceedings of the 28th Annual Meeting of the IEEE Industry Applications Conference ; Conference date: 03-10-1993 Through 08-10-1993",

}

TY - GEN

T1 - Composite gate turn-off thyristor model and its application

AU - He, Xiangning

AU - Williams, B. W.

AU - Green, T. C.

PY - 1993

Y1 - 1993

N2 - The paper presents a composite gate turn-off thyristor model, which is based on the combination of the p-n-p and n-p-n transistor models. PSpice simulations and parametric sensitive analysis are performed with the composite model and calculated results are given, which show that it corresponds statically and dynamically with the practical device, and in particular, at turn-off. Furthermore, the model, together with a Mosfet model on the gate, has been applied to a MOS Controlled Thyristor. The simulated results for this model are also presented.

AB - The paper presents a composite gate turn-off thyristor model, which is based on the combination of the p-n-p and n-p-n transistor models. PSpice simulations and parametric sensitive analysis are performed with the composite model and calculated results are given, which show that it corresponds statically and dynamically with the practical device, and in particular, at turn-off. Furthermore, the model, together with a Mosfet model on the gate, has been applied to a MOS Controlled Thyristor. The simulated results for this model are also presented.

M3 - Conference contribution

SN - 078031462X

VL - 2

SP - 1202

EP - 1207

BT - Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

T2 - Proceedings of the 28th Annual Meeting of the IEEE Industry Applications Conference

Y2 - 3 October 1993 through 8 October 1993

ER -

Composite gate turn-off thyristor model and its application

Abstract

Conference

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