Abstract
We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor-acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (VSe-Zn-NSe) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.
| Original language | English |
|---|---|
| Pages (from-to) | 2208-2210 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 61 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 1992 |
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Compensation processes in nitrogen doped ZnSe. / Hauksson, I. S.; Simpson, J.; Wang, S. Y.; Prior, K. A.; Cavenett, B. C.
In: Applied Physics Letters, Vol. 61, No. 18, 1992, p. 2208-2210.Research output: Contribution to journal › Article
TY - JOUR
T1 - Compensation processes in nitrogen doped ZnSe
AU - Hauksson, I. S.
AU - Simpson, J.
AU - Wang, S. Y.
AU - Prior, K. A.
AU - Cavenett, B. C.
PY - 1992
Y1 - 1992
N2 - We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor-acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (VSe-Zn-NSe) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.
AB - We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor-acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (VSe-Zn-NSe) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.
U2 - 10.1063/1.108296
DO - 10.1063/1.108296
M3 - Article
VL - 61
SP - 2208
EP - 2210
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 18
ER -