Abstract
We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor-acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (VSe-Zn-NSe) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.
| Original language | English |
|---|---|
| Pages (from-to) | 2208-2210 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 61 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 1992 |
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Hauksson, I. S., Simpson, J., Wang, S. Y., Prior, K. A., & Cavenett, B. C. (1992). Compensation processes in nitrogen doped ZnSe. Applied Physics Letters, 61(18), 2208-2210. https://doi.org/10.1063/1.108296