Compensation processes in nitrogen doped ZnSe

I. S. Hauksson; J. Simpson; S. Y. Wang; K. A. Prior; B. C. Cavenett

doi:10.1063/1.108296

Compensation processes in nitrogen doped ZnSe

I. S. Hauksson, J. Simpson, S. Y. Wang, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

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Abstract

We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor-acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (V_Se-Zn-N_Se) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.

Original language	English
Pages (from-to)	2208-2210
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	18
DOIs	https://doi.org/10.1063/1.108296
Publication status	Published - 1992

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title = "Compensation processes in nitrogen doped ZnSe",

abstract = "We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor-acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (VSe-Zn-NSe) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.",

author = "Hauksson, {I. S.} and J. Simpson and Wang, {S. Y.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1992",

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AU - Hauksson, I. S.

AU - Simpson, J.

AU - Wang, S. Y.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1992

Y1 - 1992

N2 - We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor-acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (VSe-Zn-NSe) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.

AB - We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor-acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (VSe-Zn-NSe) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.

U2 - 10.1063/1.108296

DO - 10.1063/1.108296

M3 - Article

SN - 0003-6951

VL - 61

SP - 2208

EP - 2210

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Compensation processes in nitrogen doped ZnSe

Abstract

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