Compensation processes in nitrogen doped ZnSe

I. S. Hauksson, J. Simpson, S. Y. Wang, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor-acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (VSe-Zn-NSe) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.

Original languageEnglish
Pages (from-to)2208-2210
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number18
DOIs
Publication statusPublished - 1992

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nitrogen
suggestion
molecular beam epitaxy
binding energy
temperature dependence
defects
profiles

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Hauksson, I. S., Simpson, J., Wang, S. Y., Prior, K. A., & Cavenett, B. C. (1992). Compensation processes in nitrogen doped ZnSe. Applied Physics Letters, 61(18), 2208-2210. https://doi.org/10.1063/1.108296
Hauksson, I. S. ; Simpson, J. ; Wang, S. Y. ; Prior, K. A. ; Cavenett, B. C. / Compensation processes in nitrogen doped ZnSe. In: Applied Physics Letters. 1992 ; Vol. 61, No. 18. pp. 2208-2210.
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Hauksson, IS, Simpson, J, Wang, SY, Prior, KA & Cavenett, BC 1992, 'Compensation processes in nitrogen doped ZnSe', Applied Physics Letters, vol. 61, no. 18, pp. 2208-2210. https://doi.org/10.1063/1.108296

Compensation processes in nitrogen doped ZnSe. / Hauksson, I. S.; Simpson, J.; Wang, S. Y.; Prior, K. A.; Cavenett, B. C.

In: Applied Physics Letters, Vol. 61, No. 18, 1992, p. 2208-2210.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Compensation processes in nitrogen doped ZnSe

AU - Hauksson, I. S.

AU - Simpson, J.

AU - Wang, S. Y.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1992

Y1 - 1992

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AB - We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor-acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (VSe-Zn-NSe) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.

U2 - 10.1063/1.108296

DO - 10.1063/1.108296

M3 - Article

VL - 61

SP - 2208

EP - 2210

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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Hauksson IS, Simpson J, Wang SY, Prior KA, Cavenett BC. Compensation processes in nitrogen doped ZnSe. Applied Physics Letters. 1992;61(18):2208-2210. https://doi.org/10.1063/1.108296