Compensation processes in nitrogen doped ZnSe

I. S. Hauksson, J. Simpson, S. Y. Wang, K. A. Prior, B. C. Cavenett

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174 Citations (Scopus)

Abstract

We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor-acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (VSe-Zn-NSe) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.

Original languageEnglish
Pages (from-to)2208-2210
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number18
DOIs
Publication statusPublished - 1992

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